An apparatus for thermal treatment of dielectric films on substrates comprises: a microwave applicator cavity and microwave power source; a workpiece to be heated in the cavity, comprising a porous coating on a selected substrate; and, a means of introducing a controlled amount of a polar solvent into said porous coating immediately before heating by said microwave power. The interaction of the polar solvent with the microwaves enhances the efficiency of the process, to shorten process time and reduce thermal budget. A related method comprises the steps of: depositing a porous film on a substrate; soft baking the film to a selected state of dryness; introducing a controlled amount of a polar solvent into the soft baked film; and, applying microwave energy to heat the film via interaction with the polar solvent.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for processing a dielectric film on a substrate, comprising: depositing a porous film on a selected substrate; soft baking said porous film to a selected state of dryness; disposing said soft baked film in a chamber and reducing pressure in the chamber to draw material out of pores in said soft baked film; subsequently introducing a controlled amount of a selected polar solvent into pores of said soft baked film by providing the polar solvent to the chamber and raising pressure in the chamber; and applying microwave energy to heat said soft baked film, wherein said heat treatment is enhanced by an interaction of said microwave energy with said polar solvent.
2. The method of claim 1 wherein said selected substrate comprises a semiconductor wafer and said porous film is selected from the group consisting of: low-k dielectric films, organo-silicate glass films, and soft-baked polymeric films.
3. The method of claim 1 wherein said polar solvent is selected from the group consisting of: water, methanol, ethanol, isopropanol, acetic acid, acetone, n-propanol, n-butanol, formic acid, propylene carbonate, ethyl acetate, dimethyl sulfoxide, acetonitrile, dimethylformamide, tetrahydrofuran, and dichloromethane.
4. The method of claim 1 wherein said polar solvent is introduced into said soft baked film by dispensing in liquid form onto the surface of said soft baked film.
5. The method of claim 1 wherein said polar solvent is introduced into said soft baked film by equilibration of said soft baked film in the chamber containing a controlled vapor pressure of said polar solvent.
6. The method of claim 1 wherein said heat treatment includes heating for a first time period at a first temperature less than the boiling point of said polar solvent, followed by heating for a second time period at a second temperature greater than the boiling point of said polar solvent and generally less than about 450° C.
7. The method of claim 1 wherein said porous film comprises a low-k dielectric and said heat treatment is conducted to remove porogens and cure said porous film.
8. A method for processing a dielectric film on a substrate, comprising: depositing a porous film on a selected substrate; soft baking said porous film to a selected state of dryness; introducing a controlled amount of a selected polar solvent into said soft baked film; and applying microwave energy to heat said soft baked film, wherein said heat treatment is enhanced by an interaction of said microwave energy with said polar solvent and wherein said heat treatment includes heating for a first time period at a first temperature less than the boiling point of said polar solvent, followed by heating for a second time period at a second temperature greater than the boiling point of said polar solvent and generally less than about 450° C.
9. The method of claim 8 wherein said selected substrate comprises a semiconductor wafer and said porous film is selected from the group consisting of: low-k dielectric films, organo-silicate glass films, and soft-baked polymeric films.
10. The method of claim 8 wherein said polar solvent is selected from the group consisting of: water, methanol, ethanol, isopropanol, acetic acid, acetone, n-propanol, n-butanol, formic acid, propylene carbonate, ethyl acetate, dimethyl sulfoxide, acetonitrile, dimethylformamide, tetrahydrofuran, and dichloromethane.
11. The method of claim 8 wherein said porous film comprises a low-k dielectric and said heat treatment is conducted to remove porogens and cure said porous film.
12. A method for processing a dielectric film on a substrate, comprising: depositing a porous film on a selected substrate; soft baking said porous film to a selected state of dryness; introducing a controlled amount of a selected polar solvent into said soft baked film by dispensing said polar solvent onto the film surface in a form selected from the group consisting of: a fluid stream, a mist of atomized droplets, and a stream of vapor in a selected carrier gas; and applying microwave energy to heat said soft baked film for a first time period at a first temperature less than the boiling point of said polar solvent, followed by heating for a second time period at a second temperature greater than the boiling point of said polar solvent and less than about 450° C., wherein said heat treatment is enhanced by an interaction of said microwave energy with said polar solvent.
13. The method of claim 12 wherein said selected substrate comprises a semiconductor wafer and said porous film is selected from the group consisting of: low-k dielectric films, organo-silicate glass films, and soft-baked polymeric films.
14. The method of claim 12 wherein said polar solvent is selected from the group consisting of: water, methanol, ethanol, isopropanol, acetic acid, acetone, n-propanol, n-butanol, formic acid, propylene carbonate, ethyl acetate, dimethyl sulfoxide, acetonitrile, dimethylformamide, tetrahydrofuran, and dichloromethane.
15. The method of claim 12 wherein said porous film comprises a low-k dielectric and said heat treatment is conducted to remove porogens and cure said porous film.
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April 15, 2014
January 3, 2017
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