A method for forming CMOS devices includes masking a first portion of a tensile-strained silicon layer of a SOI substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained. Strain in the undoped silicon layer over the doped portion is relaxed by converting the doped portion to a porous silicon to form a relaxed silicon layer. The porous silicon is converted to an oxide. A SiGe layer is grown and oxidized to convert the relaxed silicon layer to a compressed SiGe layer. Fins are etched in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming complementary metal oxide semiconductor devices, comprising: masking a first portion of a tensile-strained silicon layer of a silicon on insulator substrate with a hard mask; doping a second portion of the tensile-strained silicon layer outside the first portion; removing the hard mask; growing an undoped silicon layer on the doped portion and the first portion, wherein the undoped silicon layer becomes a tensile-strained undoped silicon layer; relaxing strain in the undoped silicon layer over the doped portion by converting the doped portion to a porous silicon to form a relaxed silicon layer; converting the porous silicon to an oxide; growing a SiGe layer on the relaxed silicon layer; oxidizing the SiGe layer to convert the relaxed silicon layer to a compressed SiGe layer; and etching fins in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.
2. The method as recited in claim 1 , wherein doping the second portion of the tensile-strained silicon layer includes boron doping the second portion.
3. The method as recited in claim 1 , wherein relaxing strain in the undoped silicon layer over the doped portion by converting the doped portion to a porous silicon to form a relaxed silicon layer includes converting the doped portion to the porous silicon with a porosity of at least 50%.
4. The method as recited in claim 1 , wherein oxidizing the SiGe layer to convert the relaxed silicon layer to a compressed SiGe layer includes employing a condensation process to form the compressed SiGe layer.
5. The method as recited in claim 1 , further comprising forming N-type field effect transistors from the fins formed from the tensile-strained silicon layer and the tensile-strained silicon layer and forming P-type field effect transistors from the compressed SiGe layer.
6. The method as recited in claim 5 , wherein the N-type field effect transistors and the P-type field effect transistors have different heights and the method further comprising adjusting the heights to adjust N/P ratio.
7. The method as recited in claim 1 , wherein relaxing strain in the undoped silicon layer includes relaxing strain by at least 50%.
8. The method as recited in claim 1 , wherein converting the doped portion to a porous silicon to form a relaxed silicon layer includes anodizing the doped portion.
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July 2, 2015
January 31, 2017
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