Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor light emitting device comprising: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode, directly contacting the first electrode pad to insulate the first electrode pad from the second contact electrode, and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.
2. The semiconductor light emitting device of claim 1 , wherein the multilayer reflective structure forms a distributed Bragg reflector in which a first dielectric layer having a first refractive index and a second dielectric layer having a second refractive index are alternately stacked.
3. The semiconductor light emitting device of claim 1 , wherein the multilayer reflective structure is disposed on the light emitting structure to cover the light emitting structure overall and to redirect light traveling in an opposite direction of a substrate of the semiconductor light emitting device to a direction of the substrate.
4. The semiconductor light emitting device of claim 1 , further comprising an insulating layer disposed on the light emitting structure such that at least portions of the first and second contact electrodes are exposed.
5. The semiconductor light emitting device of claim 4 , wherein the insulating layer forms a distributed Bragg reflector in which a plurality of dielectric layers having different refractive indices are alternately stacked.
6. The semiconductor light emitting device of claim 4 , wherein the insulating layer comprises the same material as a material of the multilayer reflective structure.
7. The semiconductor light emitting device of claim 4 , wherein the insulating layer has a substantially same thickness as a thickness of one dielectric layer of the multilayer reflective structure.
8. The semiconductor light emitting device of claim 4 , wherein the multilayer reflective structure is disposed on the insulating layer and comprises a first opening exposing a region of the first contact electrode and a second opening exposing a region of the second contact electrode, and the first and second electrode pads are connected to the first and second contact electrodes through the first and second openings, respectively.
9. The semiconductor light emitting device of claim 8 , wherein the multilayer reflective structure comprises a plurality of first and second openings, and the first and second electrode pads are connected to the first and second contact electrodes through the plurality of the first and second openings, respectively.
10. The semiconductor light emitting device of claim 4 , wherein the insulating layer is disposed on the multilayer reflective structure which comprises a plurality of openings disposed on the first and second contact electrodes, respectively.
11. The semiconductor light emitting device of claim 1 , wherein a portion of the multilayer reflective structure is disposed to be in contact with a surface of the light emitting structure.
12. The semiconductor light emitting device of claim 1 , further comprising a passivation layer which is disposed on the electrode pads and comprises a plurality of bonding regions partially exposing the first and second electrode pads.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
July 15, 2015
February 14, 2017
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