A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A plasma ion implant system for implanting ions into a substrate so as to form lines for interdigitated back-contact solar cell, comprising: a processing chamber; a grid assembly placed in the plasma chamber and dividing the processing chamber into a plasma section and ion implant section, the grid assembly configured to form beamlets of ions having divergence in a direction parallel to the lines; a transport mechanism for transporting substrates in a travel direction and positioning the substrate under the grid assembly; a plurality of masks, each mask placed on one substrate and comprising a plurality of elongated holes forming line segments arranged in parallel rows that are parallel to the lines for interdigitated back-contact solar cell, wherein line segments in each row are separated by bridges that block ions impinging thereupon and the line segments in each row correspond to one implanted line forming the lines for interdigitated back-contact solar cell; and, wherein the divergence in the beamlets is configured to be in the direction parallel to the line segments of the mask so as to provide a trajectory for ions to be implanted under the bridges.
2. The implant system of claim 1 , wherein the grid assembly is configured to cause beamlets divergence of ions up to 6° in a direction parallel to the lines.
3. The implant system of claim 1 , further configured to form a gap between the mask and the substrate, the gap set at between zero to 2 mm.
4. The implant system of claim 1 , wherein the grid assembly comprises a flat plate having a plurality of elongated holes dispersed over its surface, each of the elongated holes having a cross-sectional shape of an elongated oval having a major axis and minor axis, and having a defined depth extending through the flat plate, wherein a major axis of each of the elongated holes is configured to be aligned in a direction perpendicular to a long axis of features to be implanted on a substrate when the grid is installed inside a plasma ion implant system.
5. The implant system of claim 4 , wherein the plurality of elongated holes are arranged in a plurality of rows and a plurality of columns, such that each of the holes in each column are aligned with the holes in the preceding and following column, such that a line passing through the major axis of holes in the same row would intersect at a right angle a line passing through the minor axis of holes aligned in the same column.
6. The implant system of claim 4 , wherein the plurality of elongated holes are arranged in a plurality of rows and a plurality of columns, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected column forms an acute angle with a line passing through the major axis of holes in the same row.
7. The implant system of claim 4 , wherein the plurality of elongated holes are arranged in a plurality of rows and a plurality of columns enclosed within a rectangular area, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with sides of the rectangular area.
8. The implant system of claim 4 , wherein the plurality of elongated holes are arranged in a plurality of rows and a plurality of columns thereby forming dead zones in between the holes, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the dead zones in a selected row forms an acute angle with a direction of travel of a substrate to be implanted.
9. The implant system of claim 1 , wherein the grid assembly comprises a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns within a rectangular area and wherein each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with sides of the rectangular area.
10. The implant system of claim 1 , wherein the grid assembly comprises a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns and wherein each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected row forms an acute angle with the direction of travel of a substrate to be implanted.
11. The implant system of claim 1 , wherein the grid assembly comprises a flat plate having a plurality of round holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming dead zones in between the holes, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the dead zones in a selected row forms an acute angle with a direction of travel of a substrate to be implanted.
12. The implant system of claim 1 , wherein the grid assembly comprises a combination of exit grid and implant mask for a plasma-based ion implant system, wherein: the exit grid comprises a flat plate having a plurality of elongated holes dispersed over its surface, each of the elongated holes having a cross-sectional shape of an elongated oval having a major axis and minor axis, and having a defined depth extending through the flat plate to enable ions to pass through the elongated holes; the implant mask comprises a flat plate having a plurality of linear holes dispersed over its surface, each of the linear holes having a cross-sectional shape of an elongated oval having a long axis and short axis, and having a defined depth extending through the flat plate to enable ions to pass through the linear holes, wherein the linear holes are arranged in a plurality of parallel rows and linear holes in each row are separated from each other by ion blocking bridges; and, wherein a major axis of each of the elongated holes is aligned in a direction perpendicular to a long axis of the linear holes.
13. The implant system of claim 12 , wherein the plurality of elongated holes of the exit grid are arranged in a plurality of rows and a plurality of columns, such that each of the holes in each column are aligned with the holes in the preceding and following column, such that a line passing through the major axis of holes in the same row would intersect at a right angle a line passing through the minor axis of holes aligned in the same column.
14. The implant system of claim 12 , wherein the plurality of elongated holes of the exit grid are arranged in a plurality of rows and a plurality of columns, such that each of the holes in each column is shifted from alignment with the holes in the preceding and following column, such that a line passing through the center of all of the holes in a selected column forms an acute angle with a line passing through the major axis of holes in the same row.
15. A method for implanting ions into a substrate so as to form lines for interdigitated back-contact solar cell, comprising: igniting plasma in a plasma processing chamber and extracting ions from the plasma through a grid assembly so as to form beamlets of ions having divergence in a direction parallel to the lines; placing masks on substrates to be implanted, the mask comprising a plurality of elongated holes forming line segments arranged in parallel rows, wherein line segments in each row are separated by bridges that block ions impinging thereupon and the line segments in each row correspond to one implanted line forming the lines for interdigitated back-contact solar cell; placing the substrates on a conveyor so as to be transported to implant zone; and, directing the beamlets to pass through the mask and implant into the substrate to thereby form the parallel implanted lines for the interdigitated back-contact solar cell.
16. The method of claim 15 , further comprising forming a gap between the mask and the substrate, the gap being set at between zero to 2 mm.
17. The method of claim 16 , wherein the predetermined gap is calculated to enable diverging beamlets to implant ions at locations on the substrate that are positioned directly below the bridges, to thereby implant the plurality implanted lines, wherein each line has length corresponding to the sum of all the line segments and bridges on one row of the mask.
18. The method of claim 15 , wherein extracting the ions further comprises forming beamlets that have no divergence in a direction perpendicular to the lines.
19. The method of claim 15 , wherein extracting the ions further comprises forming beamlets that have no divergence in the direction of width of the lines for the interdigitated back-contact solar cell.
20. The method of claim 15 , further comprising forming the mask with elongated holes having width of the same width as the lines to be implanted.
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March 17, 2016
February 28, 2017
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