Methods for forming air gaps in an interconnection structure with desired materials formed on different locations of the interconnection structure using an ion implantation process to define an etching boundary followed by an etching process for semiconductor devices are provided. In one embodiment, a method for forming air gaps in an interconnection structure on a substrate, the method includes implanting ions in a first region of an insulating material disposed on a substrate, leaving a second region without implanted ions, the second region having a first surface interfaced with the first region and a second surface interfaced with the substrate, and performing an etching process to selectively etch the second region away from the substrate, forming an air gap between the first region and the substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming air gaps in an interconnection structure on a substrate, the method comprising: implanting ions in a first region of an insulating material disposed on a substrate, leaving a second region without implanted ions, the second region having a first surface interfaced with the first region and a second surface interfaced with the substrate; and performing an etching process to selectively etch the second region away from the substrate utilizing the first region of the insulating material as an etching boundary, forming an air gap between the etching boundary and the substrate.
2. The method of claim 1 , wherein the etching process is a wet etching process.
3. The method of claim 1 , wherein the etching process is a dry etching process utilizing a remote plasma etching process, the remote plasma etching process further comprising: forming a remote plasma from a gas mixture including a fluorine containing gas.
4. The method of claim 3 , wherein the fluorine containing gas is selected from a group consisting of CF 4 , C 2 F 6 , C 3 F 8 , NF 3 and C 4 F 10 .
5. The method of claim 1 , wherein a plurality of metal wirings is formed in the insulating material.
6. The method of claim 1 , wherein performing the ion implantation process further comprises: supplying a gas mixture including an oxygen containing gas during the ion implantation process.
7. The method of claim 6 , wherein the oxygen containing gas is selected from a group consisting of O 2 , H 2 O, O 3 , N 2 O and NO 2 .
8. The method of claim 1 , further comprising: etching the second region utilizing the etching boundary formed in the first region to promote etching selectivity.
9. The method of claim 1 , wherein the insulating material is a silicon containing low dielectric constant material having a dielectric constant less than 4.
10. The method of claim 1 , wherein the first region and the second region have different etching rate, providing an etching selectivity during the etching process.
11. The method of claim 1 , wherein performing the etching process to selectively etch the second region further comprises: performing a surface cut process to a substrate surface to expose a cross-section of the substrate, exposing the first and the second region of the insulating material in cross-section prior to performing the etching process.
12. The method of claim 11 , further comprising: performing a surface deposition process to seal the substrate surface after performing and etching process.
13. The method of claim 1 , wherein the ion implantation process is a plasma ion immersion process or an ion beam implantation process performed in a single step or in multiple steps.
14. The method of claim 1 , wherein the insulating material is utilized in the interconnection structure.
15. A method for forming air gaps in an interconnection structure on a substrate, the method comprising: altering film properties of a first region of an insulating material disposed on a substrate while leaving the film properties of a second region of the insulating material unchanged; and selectively removing the second region of the insulating material from the substrate utilizing the first region of the insulating material as an etching boundary to form air gaps between the etching boundary and the substrate.
16. The method of claim 15 , wherein altering the film properties of the first region further comprises: performing an ion implantation process to dope ions into the first region of the insulating material.
17. The method of claim 15 , wherein selectively removing the second region of the insulating material further comprises: performing an wet etching or a dry etching process to remove the second region of the insulating material from the substrate.
18. The method of claim 16 , wherein performing the ion implantation process further comprises: implanting oxygen ions into the first region of the insulating material.
19. A method for forming air gaps in an interconnection structure on a substrate, the method comprising: forming an etching boundary by implanting ions to a first region of an insulating material disposed on a substrate to a predetermine depth, leaving a second region of the insulating material without ions implanted; and selectively removing the second region of the insulating material from the substrate using the predetermined depth as the etching boundary, wherein the second region of the insulating material removed from the substrate forms air gaps between the substrate and the etching boundary.
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January 14, 2015
March 14, 2017
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