A method for fabricating a semiconductor structure and a solid precursor delivery system for a semiconductor fabrication is provided, the method including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A solid precursor delivery system for a semiconductor fabrication, comprising: a recrystallization reservoir, comprising: cooling elements around the recrystallization reservoir; a precursor entry port, wherein a solid precursor is configured to enter the recrystallization reservoir through the precursor entry port; a solvent entry port, wherein an organic solvent enters the recrystallization reservoir through the solvent entry port; and a granule exit port; a gas tank; a deposition chamber; and a collecting room, comprising: heating elements around the collecting room; a granule entry port connecting to the granule exit port; a gas entry port connecting to the gas tank; and a gas exit port connecting to the deposition chamber.
2. The system of claim 1 , wherein the solid precursor is Pentakis-dimethylamino tantalum (PDMAT), tantalum chloride (TaCl 5 ), tantalum fluoride (TaF 5 ), hafnium chloride (HfCl 4 ), niobium fluoride (NbF 5 ), or molybdenum fluoride (MoF 5 ).
3. The system of claim 1 , wherein the organic solvent is pentane, hexane, cyclopentane, or cyclohexane.
4. The system of claim 1 , wherein the gas tank is an inert gas tank.
5. The system of claim 4 , wherein the gas tank is an argon gas tank.
6. The system of claim 1 , wherein the deposition chamber is an atomic layer deposition chamber.
7. The system of claim 6 , wherein the atomic layer deposition chamber is applied in high-k metal gate technology.
8. The system of claim 1 , wherein a carrier gas is configured to enter the collecting room from the gas tank through the gas entry port.
9. The system of claim 8 , wherein the carrier gas exits the collecting room through the gas exit port.
10. The system of claim 9 , wherein the carrier gas through the gas exit port carries a film-forming gas to the deposition chamber.
11. The system of claim 2 , wherein the solid precursor becomes solid granules after recrystallization in the recrystallization reservoir.
12. The system of claim 11 , wherein the solid granules have a second average particle size larger than a first average particle size of the solid precursor.
13. The system of claim 12 , wherein the first average particle size ranges from 300 μm to 500 μm.
14. The system of claim 12 , wherein the second average particle size ranges from 1 mm to 10 mm.
15. The system of claim 11 , wherein the recrystallization is performed at a temperature in the range of −30° C. to 10° C.
16. The system of claim 11 , wherein the recrystallization reservoir is transportable with the solid granules inside.
17. The system of claim 11 , wherein the collecting room is transportable with the solid granules inside.
18. The system of claim 11 , wherein the solid granules are transported from the recrystallization reservoir to the collecting room.
19. The system of claim 18 , wherein the solid granules are transported through the granule entry port.
20. The system of claim 18 , wherein the solid granules keep stable during the transportation in particle size.
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April 15, 2016
April 4, 2017
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