To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A semiconductor device comprising: a first insulating layer; an oxide semiconductor layer over the first insulating layer; an electrode layer; a second insulating layer over and in contact with the electrode layer; and a contact plug, wherein the electrode layer includes a first end portion and a second end portion, wherein the first end portion is in contact with the oxide semiconductor layer, wherein the second end portion includes a semicircle notch portion when seen from the above, wherein the contact plug is in contact with the semicircle notch portion, and wherein the contact plug penetrates the first insulating layer.
The semiconductor device consists of: a first insulating layer; an oxide semiconductor layer placed above the first insulating layer; an electrode layer; a second insulating layer, which sits above the electrode layer and touches it; and a contact plug. The electrode layer has two ends: a first end that touches the oxide semiconductor layer, and a second end. When viewed from above, the second end of the electrode has a semicircular notch. The contact plug touches this semicircular notch and goes through the first insulating layer. This design allows for a compact and highly integrated semiconductor device.
2. The semiconductor device according to claim 1 , wherein the contact plug includes a region in contact with an upper surface of the electrode layer.
The semiconductor device described in claim 1, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode has a semi-circular notch that connects to the contact plug which also penetrates the first insulating layer, has a contact plug that also touches the top surface of the electrode layer. This increases the contact area between the plug and the electrode.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises In, Zn, and M (M is Al, Ti, Sn, Ga, Y, Zr, La, Ce, Nd, or Hf).
In the semiconductor device described in claim 1, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode has a semi-circular notch that connects to the contact plug which also penetrates the first insulating layer, the oxide semiconductor layer includes indium (In), zinc (Zn), and a third element (M). This third element (M) can be aluminum (Al), titanium (Ti), tin (Sn), gallium (Ga), yttrium (Y), zirconium (Zr), lanthanum (La), cerium (Ce), neodymium (Nd), or hafnium (Hf).
4. An electronic device comprising: the semiconductor device according to claim 1 ; and at least one of a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
An electronic device comprises the semiconductor device described in claim 1, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode has a semi-circular notch that connects to the contact plug which also penetrates the first insulating layer. The electronic device also includes at least one of these components: a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
5. A semiconductor device comprising: a first insulating layer; an oxide semiconductor layer over the first insulating layer; an electrode layer; a second insulating layer over and in contact with the electrode layer; and a contact plug, wherein the electrode layer is in contact with an upper surface of the oxide semiconductor layer, wherein an end portion of the electrode layer and an end portion of the oxide semiconductor layer overlap with each other in a region, wherein the end portions each include a semicircle notch portion when seen from the above, wherein the contact plug is in contact with the semicircle notch portion, and wherein the contact plug penetrates the first insulating layer.
The semiconductor device is made of: a first insulating layer; an oxide semiconductor layer placed above the first insulating layer; an electrode layer; a second insulating layer, which sits above the electrode layer and touches it; and a contact plug. The electrode layer touches the upper surface of the oxide semiconductor layer. An end of the electrode layer and an end of the oxide semiconductor layer overlap in a specific area. Both of these overlapping ends have semicircular notches when viewed from above. The contact plug touches the semicircular notch and goes through the first insulating layer.
6. The semiconductor device according to claim 5 , wherein the contact plug includes a region in contact with an upper surface of the electrode layer.
The semiconductor device described in claim 5, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode and oxide semiconductor layer have overlapping semi-circular notches that connects to the contact plug which also penetrates the first insulating layer, has a contact plug that also touches the top surface of the electrode layer. This improves the electrical connection.
7. The semiconductor device according to claim 5 , wherein the oxide semiconductor layer comprises In, Zn, and M (M is Al, Ti, Sn, Ga, Y, Zr, La, Ce, Nd, or Hf).
In the semiconductor device described in claim 5, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode and oxide semiconductor layer have overlapping semi-circular notches that connects to the contact plug which also penetrates the first insulating layer, the oxide semiconductor layer consists of indium (In), zinc (Zn), and a third element (M). This third element (M) is either aluminum (Al), titanium (Ti), tin (Sn), gallium (Ga), yttrium (Y), zirconium (Zr), lanthanum (La), cerium (Ce), neodymium (Nd), or hafnium (Hf).
8. An electronic device comprising: the semiconductor device according to claim 5 ; and at least one of a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
An electronic device consists of the semiconductor device described in claim 5, which includes a first insulating layer, an oxide semiconductor layer above it, an electrode layer, a second insulating layer on the electrode layer, and a contact plug where the electrode and oxide semiconductor layer have overlapping semi-circular notches that connects to the contact plug which also penetrates the first insulating layer. The electronic device also includes at least one of these parts: a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
9. A semiconductor device comprising: a first transistor; a first insulating layer over the first transistor; a second transistor over the first transistor; and a contact plug, wherein the first transistor includes a channel formation region in a silicon substrate, wherein the second transistor includes an oxide semiconductor layer and a second insulating layer over the oxide semiconductor layer, wherein the first transistor and the second transistor overlap with each other, wherein one of a source region and a drain region of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor through the contact plug, wherein one or both of the source electrode and the drain electrode of the second transistor include a first end portion and a second end portion, wherein the second insulating layer is provided over and in contact with one or both of the source electrode and the drain electrode of the second transistor, wherein the first end portion is in contact with the oxide semiconductor layer, wherein the second end portion includes a semicircle notch portion when seen from the above, and wherein the contact plug is in contact with the semicircle notch portion and penetrates the first insulating layer.
The semiconductor device features: a first transistor; a first insulating layer above the first transistor; a second transistor above the first transistor; and a contact plug. The first transistor has a channel in a silicon substrate. The second transistor has an oxide semiconductor layer and a second insulating layer above it. The first and second transistors overlap. A source/drain region of the first transistor is electrically connected to a source/drain electrode of the second transistor via the contact plug. One or both of the source/drain electrodes of the second transistor has a first end and a second end. The second insulating layer is above and touching the source/drain electrode(s). The first end touches the oxide semiconductor layer, the second end has a semicircular notch, and the contact plug touches this notch and goes through the first insulating layer.
10. The semiconductor device according to claim 9 , wherein the first transistor and the second transistor form a CMOS circuit.
The semiconductor device described in claim 9, which includes a first transistor with a channel in silicon, a second transistor with an oxide semiconductor layer, a contact plug connecting them, and the second transistor's electrode having a semicircular notch for the contact plug, the first transistor and the second transistor form a CMOS (Complementary Metal-Oxide-Semiconductor) circuit.
11. The semiconductor device according to claim 9 , wherein the oxide semiconductor layer comprises In, Zn, and M (M is Al, Ti, Sn, Ga, Y, Zr, La, Ce, Nd, or Hf).
In the semiconductor device described in claim 9, which includes a first transistor with a channel in silicon, a second transistor with an oxide semiconductor layer, a contact plug connecting them, and the second transistor's electrode having a semicircular notch for the contact plug, the oxide semiconductor layer consists of indium (In), zinc (Zn), and a third element (M). This third element (M) is either aluminum (Al), titanium (Ti), tin (Sn), gallium (Ga), yttrium (Y), zirconium (Zr), lanthanum (La), cerium (Ce), neodymium (Nd), or hafnium (Hf).
12. An electronic device comprising: the semiconductor device according to claim 9 ; and at least one of a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
An electronic device consists of the semiconductor device described in claim 9, which includes a first transistor with a channel in silicon, a second transistor with an oxide semiconductor layer, a contact plug connecting them, and the second transistor's electrode having a semicircular notch for the contact plug. The electronic device also includes at least one of these items: a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 30, 2015
May 9, 2017
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