A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a source region, a drain region, a gate, and a dummy contact. The source region and the drain region are formed in the substrate. The gate is formed on the substrate and between the source region and the drain region. The dummy contact includes a plurality of dummy plugs formed on the substrate, wherein the dummy plugs have depths decreasing towards the drain region.
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1. A semiconductor structure, comprising: a substrate; a source region and a drain region formed in the substrate; a gate formed on the substrate and between the source region and the drain region; and a dummy contact formed on the substrate, the dummy contact comprising a plurality of dummy plugs, wherein the dummy plugs have depths decreasing towards the drain region.
A semiconductor structure contains a substrate, a source region, and a drain region within the substrate. A gate is positioned on the substrate between the source and drain. Crucially, a "dummy contact" comprised of multiple dummy plugs is formed on the substrate. These dummy plugs have varying depths, with the depths decreasing as they get closer to the drain region. This creates a stepped profile in the contact structure near the drain.
2. The semiconductor structure according to claim 1 , further comprising: a gate contact electrically connected to the gate, wherein the dummy contact is electrically connected to the gate contact.
The semiconductor structure described previously also features a gate contact that is electrically connected to the gate. The dummy contact, which includes the depth-decreasing dummy plugs, is electrically connected to this gate contact. Therefore, the stepped dummy contact structure is tied electrically to the gate.
3. The semiconductor structure according to claim 1 , further comprising: an isolation structure formed in the substrate, wherein the dummy contact is formed apart from the isolation structure.
The semiconductor structure, as described previously, also incorporates an isolation structure within the substrate. The dummy contact, with its varying depth plugs, is intentionally positioned away from this isolation structure. The dummy contact and the isolation structure are spatially separated on the substrate.
4. The semiconductor structure according to claim 1 , wherein the dummy plug with the smallest depth is separated from an edge of the gate by a first distance, the edge of the gate is separated from an edge of the drain region by a second distance, and a ratio of the first distance to the second distance is equal to or small than ⅔.
In the semiconductor structure, the shallowest dummy plug (the one closest to the drain) is separated from the gate's edge by a distance we'll call "first distance." The gate's edge is separated from the drain region's edge by a "second distance." The "first distance" divided by the "second distance" results in a ratio that is less than or equal to ⅔ (0.666...). This defines the relative spacing of the shallowest dummy plug.
5. The semiconductor structure according to claim 1 , wherein the number of the dummy plugs is at least three, any two of the adjacent dummy plugs are separated by a spacing, and the spacings between the dummy plugs are the same.
The semiconductor structure's dummy contact comprises at least three dummy plugs, arranged with decreasing depth. These plugs are separated by a space. The spacing between each pair of adjacent dummy plugs is uniform - the distance between plug 1 and 2 is the same as the distance between plug 2 and 3, etc. This consistent spacing is maintained along the drain-facing direction.
6. The semiconductor structure according to claim 1 , wherein the depths of the dummy plugs are decreasing by a depth interval of 0.01-0.2μm.
Within the semiconductor structure's dummy contact, the depths of the individual dummy plugs decrease in steps. The difference in depth between each adjacent plug, the "depth interval," falls within the range of 0.01 to 0.2 micrometers. This defines the scale of the depth graduation within the dummy contact.
7. The semiconductor structure according to claim 1 , wherein the depths of the dummy plugs are decreasing by a depth decreasing ratio of 1-30%, and the depth decreasing ratio is defined as a difference between the two depths to the larger one of the two depths of any two adjacent ones of the dummy plugs.
In the semiconductor structure, the dummy plugs decrease in depth. The "depth decreasing ratio" between adjacent plugs is between 1% and 30%. This ratio is calculated as: (depth difference / larger depth) * 100. This specifies the percentage reduction in depth from one plug to the next.
8. The semiconductor structure according to claim 1 , wherein the dummy plugs have widths decreasing towards the drain region.
The semiconductor structure’s dummy contact features dummy plugs with widths that decrease as they approach the drain region. The plugs not only get shallower but also narrower closer to the drain.
9. The semiconductor structure according to claim 8 , wherein the widths of the dummy plugs are decreasing by a width interval of 0.01-0.1 μm.
Building on the semiconductor structure where the dummy plug widths decrease towards the drain, the difference in width between adjacent plugs (the "width interval") is between 0.01 and 0.1 micrometers. This quantifies the step-down in width.
10. The semiconductor structure according to claim 8 , wherein the widths of the dummy plugs are decreasing by a width decreasing ratio of 5-80%, and the width decreasing ratio is defined as a difference between the two widths to the larger one of the two widths of any two adjacent ones of the dummy plugs.
For the semiconductor structure with dummy plugs decreasing in width, the "width decreasing ratio" (calculated as (width difference / larger width) * 100) between any two adjacent dummy plugs falls within the range of 5% to 80%. This defines the percentage by which the width reduces.
11. The semiconductor structure according to claim 8 , further comprising a gate contact electrically connected to the gate, wherein a width of the gate contact is larger than the widths of the dummy plugs.
In the semiconductor structure, a gate contact electrically connects to the gate. Furthermore, the width of the gate contact is larger than the width of any of the dummy plugs that form the dummy contact. The gate contact is the widest of these contact structures.
12. A manufacturing method of a semiconductor structure, comprising: providing a substrate; forming a source region and a drain region in the substrate; forming a gate on the substrate and between the source region and the drain region; and forming a dummy contact on the substrate, the dummy contact comprising a plurality of dummy plugs, wherein the dummy plugs have depths decreasing towards the drain region.
A method for creating a semiconductor structure involves: providing a substrate; forming a source and drain region in the substrate; forming a gate on the substrate between the source and drain; and forming a dummy contact on the substrate. The dummy contact includes multiple dummy plugs whose depths decrease as they approach the drain region, creating a stepped profile.
13. The manufacturing method of the semiconductor structure according to claim 12 , further comprising: forming a gate contact electrically connected to the gate, wherein the dummy contact is electrically connected to the gate contact.
The semiconductor manufacturing method described above also includes forming a gate contact that is electrically connected to the gate. The method also involves electrically connecting the stepped dummy contact (plugs of varying depth) to the gate contact.
14. The manufacturing method of the semiconductor structure according to claim 12 , further comprising: forming an insulating material on the substrate; and forming a plurality of dummy plug holes in the insulating material, wherein the dummy plug holes have widths decreasing towards the drain region.
The semiconductor manufacturing method begins with a substrate, source, drain, and gate formation. An insulating material is then formed on the substrate. Next, multiple dummy plug holes are created in this insulating material. These holes have widths that decrease as they get closer to where the drain region will be formed.
15. The manufacturing method of the semiconductor structure according to claim 14 , further comprising: forming a gate contact hole in the insulating material, wherein a width of the gate contact hole is larger than the widths of the dummy plug holes.
In addition to forming the dummy plug holes with decreasing widths in the insulating layer, the semiconductor manufacturing method also creates a gate contact hole in the same insulating layer. The width of the gate contact hole is larger than the width of any of the dummy plug holes.
16. The manufacturing method of the semiconductor structure according to claim 12 , further comprising: forming an isolation structure in the substrate, wherein the dummy contact is formed apart from the isolation structure.
The semiconductor manufacturing process includes forming an isolation structure within the substrate. The method ensures that the dummy contact (the series of plugs with varying depth) is formed spatially apart from this isolation structure.
17. The manufacturing method of the semiconductor structure according to claim 12 , wherein the dummy plug with the smallest depth is separated from an edge of the gate by a first distance, the edge of the gate is separated from an edge of the drain region by a second distance, and a ratio of the first distance to the second distance is equal to or small than ⅔.
In the semiconductor manufacturing method, the shallowest dummy plug is separated from the gate's edge by a "first distance," and the gate's edge is separated from the drain region's edge by a "second distance." The method ensures that the ratio of the "first distance" to the "second distance" is less than or equal to ⅔.
18. The manufacturing method of the semiconductor structure according to claim 12 , wherein the depths of the dummy plugs are decreasing by a depth decreasing ratio of 1-30%, and the depth decreasing ratio is defined as a difference between the two depths to the larger one of the two depths of any two adjacent ones of the dummy plugs.
During manufacture, the dummy plugs' depths decrease, and the "depth decreasing ratio" (difference in depth divided by the larger depth of two adjacent plugs, expressed as a percentage) is maintained between 1% and 30%.
19. The manufacturing method of the semiconductor structure according to claim 12 , wherein the dummy plugs have widths decreasing towards the drain region.
The semiconductor manufacturing method includes forming the dummy plugs such that their widths decrease as they approach the drain region. This creates dummy plugs that are both shallower and narrower closer to the drain.
20. The manufacturing method of the semiconductor structure according to claim 19 , wherein the widths of the dummy plugs are decreasing by a width decreasing ratio of 5-80%, and the width decreasing ratio is defined as a difference between the two widths to the larger one of the two widths of any two adjacent ones of the dummy plugs.
In the semiconductor manufacturing method, the widths of the dummy plugs decrease towards the drain, and the "width decreasing ratio" (calculated as the width difference divided by the larger width, expressed as a percentage) between any two adjacent dummy plugs is maintained between 5% and 80%.
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June 15, 2015
May 16, 2017
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