Dynamic reference current sensing

1. A sensing circuit comprising: a first path having a first current, the first current having a first current value based on a first logical value of a first reference cell; a second path separate from the first path, the second path having a second current, the second current having a second current value based on a second logical value of a second reference cell, the second logical value being different from the first logical value; a current generating circuit configured to generate a reference current having a reference current value based on the first current value and the second current value; and a sense amplifier configured: to generate a third current having a third current value; to generate a fourth current having a fourth current value based on the third current value; to sum, at a comparison node, the fourth current and a fifth current having a fifth current value, the fifth current being a mirror of the reference current; and a buffer configured to output a voltage on the comparison node as an output of the sensing circuit.

2. The sensing circuit of claim 1 , wherein the first current value includes a current value of the first reference cell and is less than the reference current value; and the second current value includes a current value of the second reference cell and is greater than the reference current value.

3. The sensing circuit of claim 1 , further comprising a memory cell configured to generate the third current, wherein the first current value corresponds to a first value of the third current when the memory cell stores the first logical value; and the second current value corresponds to a second value of the third current when the memory cell stores the second logical value.

4. The sensing circuit of claim 1 , wherein the first current value and the second current value are each about half of the reference current value.

5. The sensing circuit of claim 1 , wherein the first current value and the second current value are each related to the reference current value based on a ratio.

6. The sensing circuit of claim 1 , wherein the current generating circuit comprises a first current mirror configured to mirror the first current to a fourth current having a fourth current value; the first current value is related to the fourth current value by a first ratio; the current generating circuit further comprises a second current mirror configured to mirror the second current to a fifth current having a fifth current value; and the second current value is related to the fifth current value by a second ratio.

7. The sensing circuit of claim 6 , wherein: the first ratio equals the second ratio; and the current generating circuit is further configured to generate the reference current from the fourth current and the fifth current.

8. The sensing circuit of claim 1 , wherein the sense amplifier comprises a first current mirror configured to mirror the third current to the fourth current; the sense amplifier further comprises a second current mirror configured to mirror the reference current to a fifth current.

9. The memory circuit of claim 1 , further comprising at least one of: a first stabilization circuit configured to stabilize the first current; a second stabilization circuit configured to stabilize the second current; or a third stabilization circuit configured to stabilize the third current.

10. A sensing method comprising: generating a first current on a first path and a second current on a second path separate from the first path; generating a reference current based on the first current and the second current; and summing, at a comparison node, a third current having a value of the reference current and a fourth current having a value of a current of a selected memory cell; and outputting a voltage on the comparison node as a result of the sensing method; wherein: the first current has a first value corresponding to a value of the current of the device when the device is in a first state; and the second current has a second value corresponding to a value of the current of the device when the device is in a second state different from the first state.

11. The sensing method of claim 10 , wherein the value of the reference current is an average of a value of the first current and a value of the second current.

12. The sensing method of claim 10 , wherein the device includes a memory cell; and the memory cell stores a first logical value corresponding to the first state or stores a second logical value corresponding to the second state.

13. The sensing method of claim 12 , further comprising: generating a fifth current based on the first current; and generating a sixth current based on the second current, wherein generating the reference current is based on the fifth current and the sixth current.

14. The sensing method of claim 10 further comprising: mirroring the reference current to obtain the third current; and mirroring the current of the selected memory cell to obtain the fourth current.

15. The sensing method of claim 10 , further comprising: stabilizing at least one of the first current, the second current or a current of a device.

16. A memory-sensing circuit comprising: a plurality of memory cells; a plurality of first reference cells programmed to a first logical value, each of the first reference cells being configured to generate a first current; a plurality of second reference cells programmed to a second logical value, wherein the first logical value is different from the second logical value, each of the second reference cells being configured to generate a second current; a first selection circuit configured to select a memory cell of the plurality of memory cells; a second selection circuit configured to select a first reference cell of the plurality of first reference cells; a third selection circuit configured to select a second reference cell of the plurality of second reference cells; a current generating circuit configured to generate a reference current based on the selected first reference cell and the selected second reference cell, wherein the selected first reference cell is on a current path separate from a current path of the selected second reference cell; a sense amplifier configured to sum, at a comparison node, a third current having a value of the reference current and a fourth current having a value of a current of the selected memory cell; and a buffer configured to output a voltage on the comparison node as an output of the memory-sensing circuit.

17. The memory-sensing circuit of claim 16 , further comprising a first circuit configured to generate a current having half a value of a current of the selected first reference cell; and a second circuit configured to generate a current having half a value of a current of the selected second reference cell, wherein the current generating circuit is further configured to generate the reference current based on the current having half a value of the current of the selected first reference cell and on the current having half a value of the current of the selected second reference cell.

18. The memory-sensing circuit of claim 17 , further comprising a third circuit configured to generate the fourth current having the value of the current of the selected memory cell; and a fourth circuit configured to generate the third current having a value of the reference current.

19. The memory-sensing circuit of claim 16 , further comprising at least one of: a first stabilization circuit configured to stabilize a current of the selected first reference cell; a second stabilization circuit configured to stabilize a current of the selected second reference cell; or a third stabilization circuit configured to stabilize the current of the selected memory cell.