A module and a method for manufacturing a module are disclosed. An embodiment of a module includes a first semiconductor device, a frame arranged on the first semiconductor device, the frame including a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A module comprising: a support substrate; a first semiconductor device arranged on the support substrate, wherein the first semiconductor device is electrically connected via a first electrical connection to the support substrate; a frame arranged on the first semiconductor device, the frame comprising a cavity; and a second semiconductor device arranged on the frame, wherein the second semiconductor device seals the cavity, wherein a second electrical connection is directly connected to both the second semiconductor device and the support substrate, and wherein a third electrical connection is directly connected to both the first semiconductor device and the second semiconductor device.
2. The module according to claim 1 , wherein the first semiconductor device is a radio frequency (RF) filter.
3. The module according to claim 1 , wherein the first semiconductor device is selected from the group consisting of: a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter and a film bulk acoustic resonator (FBAR) filter.
4. The module according to claim 1 , wherein the second semiconductor device comprises a power amplifier, a low noise amplifier (LNA), or a switch.
5. The module according to claim 1 , wherein the frame comprises an organic material.
6. The module according to claim 1 , wherein the first electrical connection is a first wire, and wherein the second electrical connection is a second wire.
7. The module according to claim 1 , wherein a lateral width of the first semiconductor device is larger than a lateral width of the second semiconductor device.
8. The module according to claim 1 , further comprising an encapsulation body encapsulating the first semiconductor device, the second semiconductor device and the frame.
9. The module according to claim 1 , wherein the frame comprises a metal.
10. The module according to claim 1 , wherein the frame comprises a ceramic.
11. The module according to claim 1 , wherein the cavity is a single cavity.
12. The module according to claim 1 , wherein a backside of the first semiconductor device is bonded to the support substrate with a first non-conducting bond.
13. The module according to claim 12 , wherein a backside of the second semiconductor device is bonded to the frame with a second non-conducting bond.
14. A module comprising: a support substrate; a first semiconductor device arranged on the support substrate; a second semiconductor device arranged on the support substrate; a frame comprising a cavity arranged between the first semiconductor device and the second semiconductor device; and an encapsulation body encapsulating the first semiconductor device, the second semiconductor device and the frame, wherein the first semiconductor device is electrically connected to the support substrate with a first wire and a second wire, wherein each of a third wire and a fourth wire is directly connected to both the second semiconductor device and the support substrate, and wherein a fifth wire is directly connected to both the first semiconductor device and the second semiconductor device.
15. The module according to claim 14 , wherein the first semiconductor device is an RF filter, and the second semiconductor device comprises a power amplifier or a low noise amplifier (LNA).
16. The module according to claim 14 , wherein a lateral width of the first semiconductor device is larger than a lateral width of the second semiconductor device.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 30, 2014
June 27, 2017
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