A method for forming a package structure is provided. The method includes forming a plurality of conductive columns over a carrier substrate and forming an interfacial layer over sidewalls and tops of the conductive columns. The method also includes disposing a semiconductor die over a planar portion of the interfacial layer. The method further includes forming a molding compound to partially or completely encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming a package structure, comprising: forming a base layer, a redistribution layer, and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; depositing an interfacial layer over sidewalls of the conductive columns, wherein the interfacial layer comprises an insulating material; disposing a semiconductor die over the redistribution layer; forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer, wherein the molding compound is in direct contact with the interfacial layer; forming a second redistribution layer over the conductive columns and the semiconductor die; and removing the carrier substrate.
2. The method for forming a package structure as claimed in claim 1 , wherein the conductive columns are directly electroplated on the redistribution layer.
3. The method for forming a package structure as claimed in claim 1 , further comprising: removing a portion of the base layer to expose a portion of the redistribution layer; and stacking a second semiconductor die over the redistribution layer through connectors formed between the second semiconductor die and the redistribution layer.
4. The method for forming a package structure as claimed in claim 3 , further comprising bonding a die package to the redistribution layer through connectors formed between the die package and the redistribution layer after the second semiconductor die is stacked.
5. The method for forming a package structure as claimed in claim 1 , further comprising grinding the molding compound to expose the conductive columns before the second redistribution layer is formed over the conductive columns and the semiconductor die.
6. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is conformally deposited on the sidewalls of the conductive columns.
7. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is also deposited on the redistribution layer to form a planar portion of the interfacial layer on the redistribution layer, and the semiconductor die is disposed on the interfacial layer.
8. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer comprises polybenzoxazole (PBO), polyimide (PI), or a combination thereof.
9. The method for forming a package structure as claimed in claim 1 , further comprising: forming a mask layer over the redistribution layer before forming the conductive columns, wherein the mask layer has openings exposing portions of the redistribution layer; forming the conductive columns in the openings of the mask layer by electroplating; and removing the mask layer.
10. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is directly deposited on the conductive columns.
11. A method for forming a package structure, comprising: forming a base laver, a redistribution layer, and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; forming an interfacial layer over sidewalls of the conductive columns and the redistribution layer, wherein the interfacial layer is made of an insulating material; disposing a semiconductor die over the redistribution layer; and forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
12. The method for forming a package structure as claimed in claim 11 , further comprising forming a second redistribution layer over the conductive columns and the semiconductor die.
13. The method for forming a package structure as claimed in claim 12 , further comprising removing a portion of the molding compound and a portion of the interfacial layer to expose the conductive columns before the second redistribution layer is formed over the conductive columns and the semiconductor die.
14. The method for forming a package structure as claimed in claim 11 , further comprising: removing a portion of the base layer to expose a portion of the redistribution layer; and stacking a second semiconductor die over the redistribution layer through connectors formed between the second semiconductor die and the redistribution layer.
15. The method for forming a package structure as claimed in claim 14 , further comprising removing the carrier substrate before the stacking of the second semiconductor die.
16. A method for forming a package structure, comprising: forming a base layer and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; forming an interfacial layer over sidewalls and tops of the conductive columns, wherein the interfacial layer is made of an insulating material; disposing a semiconductor die over a planar portion of the interfacial layer; and forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
17. The method for forming a package structure as claimed in claim 16 , wherein the interfacial layer is directly formed on the conductive columns.
18. The method for forming a package structure as claimed in claim 16 , wherein the interfacial layer includes a polymer material.
19. The method for forming a package structure as claimed in claim 16 , further comprising: removing the carrier substrate; and stacking a second semiconductor die over a backside of the semiconductor die after the removal of the carrier substrate such that the semiconductor die is electrically connected to one of the conductive columns.
20. The method for forming a package structure as claimed in claim 19 , further comprising removing a portion of the molding compound and a portion of the interfacial layer after the removal of the carrier substrate and before the stacking of the second semiconductor die.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 7, 2016
July 4, 2017
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