A method for forming a package structure is provided. The method includes forming a plurality of conductive columns over a carrier substrate and forming an interfacial layer over sidewalls and tops of the conductive columns. The method also includes disposing a semiconductor die over a planar portion of the interfacial layer. The method further includes forming a molding compound to partially or completely encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
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1. A method for forming a package structure, comprising: forming a base layer, a redistribution layer, and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; depositing an interfacial layer over sidewalls of the conductive columns, wherein the interfacial layer comprises an insulating material; disposing a semiconductor die over the redistribution layer; forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer, wherein the molding compound is in direct contact with the interfacial layer; forming a second redistribution layer over the conductive columns and the semiconductor die; and removing the carrier substrate.
A method for manufacturing a package structure includes: building a base insulating layer, a redistribution layer (RDL), and multiple conductive columns on top of a carrier substrate. An insulating interfacial layer is then deposited on the sidewalls of the conductive columns. A semiconductor die is placed on the RDL. A molding compound encapsulates the die, columns, and interfacial layer, making direct contact with the interfacial layer. A second RDL is formed over the conductive columns and die. Finally, the carrier substrate is removed, leaving the completed package structure.
2. The method for forming a package structure as claimed in claim 1 , wherein the conductive columns are directly electroplated on the redistribution layer.
In the package structure manufacturing method described above, the conductive columns are formed directly on the redistribution layer (RDL) using an electroplating process. This means the conductive columns are directly grown on the RDL without needing any intermediate layers or adhesive.
3. The method for forming a package structure as claimed in claim 1 , further comprising: removing a portion of the base layer to expose a portion of the redistribution layer; and stacking a second semiconductor die over the redistribution layer through connectors formed between the second semiconductor die and the redistribution layer.
The package structure manufacturing method described previously also includes removing a section of the base insulating layer to reveal part of the redistribution layer (RDL). A second semiconductor die is then stacked on the RDL, making electrical connections to it via connectors formed between the die and the RDL. This allows for a stacked die configuration within the package.
4. The method for forming a package structure as claimed in claim 3 , further comprising bonding a die package to the redistribution layer through connectors formed between the die package and the redistribution layer after the second semiconductor die is stacked.
Building on the stacked-die configuration, after stacking the second semiconductor die onto the redistribution layer (RDL) using connectors, a pre-fabricated die package is also bonded to the same redistribution layer using connectors. This allows for integrating both a bare die and a pre-packaged die within the final package structure, both connected to the RDL.
5. The method for forming a package structure as claimed in claim 1 , further comprising grinding the molding compound to expose the conductive columns before the second redistribution layer is formed over the conductive columns and the semiconductor die.
Before forming the second redistribution layer (RDL) over the conductive columns and semiconductor die, the molding compound is ground down to expose the tops of the conductive columns. This grinding step ensures electrical contact can be made to the columns when the second RDL is deposited.
6. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is conformally deposited on the sidewalls of the conductive columns.
The interfacial layer, which is deposited on the sidewalls of the conductive columns, is applied in a conformal manner. This means the interfacial layer uniformly coats the sidewalls, maintaining a consistent thickness and shape, even with the complex geometries of the columns.
7. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is also deposited on the redistribution layer to form a planar portion of the interfacial layer on the redistribution layer, and the semiconductor die is disposed on the interfacial layer.
The interfacial layer is deposited not only on the sidewalls of the conductive columns but also on the redistribution layer (RDL), creating a flat, planar section of the interfacial layer on the RDL surface. The semiconductor die is then placed on this planar portion of the interfacial layer.
8. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer comprises polybenzoxazole (PBO), polyimide (PI), or a combination thereof.
The interfacial layer, used to insulate the conductive columns, is made from polybenzoxazole (PBO), polyimide (PI), or a combination of both. These materials are chosen for their insulating properties and compatibility with semiconductor manufacturing processes.
9. The method for forming a package structure as claimed in claim 1 , further comprising: forming a mask layer over the redistribution layer before forming the conductive columns, wherein the mask layer has openings exposing portions of the redistribution layer; forming the conductive columns in the openings of the mask layer by electroplating; and removing the mask layer.
Before growing the conductive columns, a mask layer with openings is created on the redistribution layer (RDL). The conductive columns are formed by electroplating material into these openings. After the columns are formed, the mask is removed, leaving only the columns on the RDL.
10. The method for forming a package structure as claimed in claim 1 , wherein the interfacial layer is directly deposited on the conductive columns.
The insulating interfacial layer is applied directly to the conductive columns without any intermediate layers. The interfacial layer sits immediately on top of the column sidewalls.
11. A method for forming a package structure, comprising: forming a base laver, a redistribution layer, and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; forming an interfacial layer over sidewalls of the conductive columns and the redistribution layer, wherein the interfacial layer is made of an insulating material; disposing a semiconductor die over the redistribution layer; and forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
A method for manufacturing a package structure includes: building a base insulating layer, a redistribution layer (RDL), and multiple conductive columns on top of a carrier substrate. An insulating interfacial layer is deposited on the sidewalls of the conductive columns AND on the redistribution layer itself. A semiconductor die is placed on the RDL. A molding compound encapsulates the die, columns, and interfacial layer, making direct contact with the interfacial layer.
12. The method for forming a package structure as claimed in claim 11 , further comprising forming a second redistribution layer over the conductive columns and the semiconductor die.
In the package structure manufacturing method where an interfacial layer coats the conductive column sidewalls and redistribution layer, a second redistribution layer (RDL) is formed over the conductive columns and the semiconductor die.
13. The method for forming a package structure as claimed in claim 12 , further comprising removing a portion of the molding compound and a portion of the interfacial layer to expose the conductive columns before the second redistribution layer is formed over the conductive columns and the semiconductor die.
In the package structure manufacturing method with two redistribution layers, before the second redistribution layer (RDL) is formed, some of the molding compound and interfacial layer are removed to expose the conductive columns. This ensures the second RDL can make electrical contact with the columns.
14. The method for forming a package structure as claimed in claim 11 , further comprising: removing a portion of the base layer to expose a portion of the redistribution layer; and stacking a second semiconductor die over the redistribution layer through connectors formed between the second semiconductor die and the redistribution layer.
The package structure manufacturing method described previously also includes removing a section of the base insulating layer to reveal part of the redistribution layer (RDL). A second semiconductor die is then stacked on the RDL, making electrical connections to it via connectors formed between the die and the RDL. This allows for a stacked die configuration within the package.
15. The method for forming a package structure as claimed in claim 14 , further comprising removing the carrier substrate before the stacking of the second semiconductor die.
In the package structure manufacturing method including stacking a second die, the carrier substrate is removed *before* the second semiconductor die is stacked on the redistribution layer (RDL).
16. A method for forming a package structure, comprising: forming a base layer and a plurality of conductive columns over a carrier substrate, wherein the base layer is an insulating layer; forming an interfacial layer over sidewalls and tops of the conductive columns, wherein the interfacial layer is made of an insulating material; disposing a semiconductor die over a planar portion of the interfacial layer; and forming a molding compound to at least partially encapsulate the semiconductor die, the conductive columns, and the interfacial layer such that the molding compound is in direct contact with the interfacial layer.
A method for manufacturing a package structure involves building a base insulating layer and conductive columns on a carrier substrate. An insulating interfacial layer is formed on the sidewalls and tops of the conductive columns. A semiconductor die is placed on top of a flat section of the interfacial layer. A molding compound is then applied to encapsulate the die, columns, and interfacial layer, making direct contact with the interfacial layer.
17. The method for forming a package structure as claimed in claim 16 , wherein the interfacial layer is directly formed on the conductive columns.
In the package structure manufacturing method where the interfacial layer coats the conductive columns' sidewalls and tops, the interfacial layer is directly formed on the conductive columns themselves without any intermediate layers.
18. The method for forming a package structure as claimed in claim 16 , wherein the interfacial layer includes a polymer material.
In the package structure manufacturing method where the interfacial layer coats the conductive columns' sidewalls and tops, the interfacial layer is made from a polymer material.
19. The method for forming a package structure as claimed in claim 16 , further comprising: removing the carrier substrate; and stacking a second semiconductor die over a backside of the semiconductor die after the removal of the carrier substrate such that the semiconductor die is electrically connected to one of the conductive columns.
The package structure manufacturing method including the interfacial layer on the column tops continues with removing the carrier substrate. A second semiconductor die is stacked on the backside of the first die (the die already encapsulated). The second die is electrically connected to one of the conductive columns.
20. The method for forming a package structure as claimed in claim 19 , further comprising removing a portion of the molding compound and a portion of the interfacial layer after the removal of the carrier substrate and before the stacking of the second semiconductor die.
In the package structure manufacturing method where a second die is stacked on the first, after removing the carrier substrate but *before* stacking the second die, portions of the molding compound and the interfacial layer are removed.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 7, 2016
July 4, 2017
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