A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be detected through optical sensors. The opaque layer may be modified, or oriented, to allow light to pass through unobstructed.
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1. A semiconductor structure comprising: a support wafer, wherein the support wafer comprises a transparent wafer and an opaque surface on at least a portion of a surface of the transparent wafer; a semiconductor wafer bonded to the support wafer.
A semiconductor structure is created by bonding a semiconductor wafer to a support wafer. The support wafer has a transparent section and an opaque surface on at least part of that transparent section. This opaque surface allows optical sensors to detect the handling wafer's surface through the opaque layer.
2. The structure of claim 1 , wherein the opaque surface covers an entire surface of the support wafer.
The semiconductor structure is built by bonding a semiconductor wafer to a support wafer, where the support wafer has a transparent section covered entirely with an opaque surface. This opaque surface enables optical sensors to detect the surface. The opaque layer sits on the transparent wafer.
3. The structure of claim 2 , wherein the opaque surface is frosted glass.
The semiconductor structure involves a semiconductor wafer bonded to a support wafer. The support wafer consists of a transparent section completely covered with an opaque surface made of frosted glass. This opaque frosted glass enables surface detection using optical sensors, facilitating semiconductor wafer processing using an opaque handling wafer for optical detection.
4. The structure of claim 1 , wherein the opaque surface covers only an outer edge of a surface of the support wafer.
A semiconductor structure comprises a semiconductor wafer bonded to a support wafer. The support wafer has a transparent section, but the opaque surface only covers the outer edge of the support wafer's surface. The opaque outer edge enables optical sensor detection.
5. The structure of claim 4 , wherein the opaque surface comprises at least a metal, a metal nitride or a metal oxide.
This semiconductor structure uses a semiconductor wafer bonded to a support wafer, where the support wafer is made of transparent material with an opaque layer on the outer edge. This opaque outer edge consists of a metal, metal nitride, or metal oxide that can be detected through optical sensors.
6. The structure of claim 4 , wherein the opaque surface covers only an outer annular edge of a the surface of the support wafer.
The semiconductor structure bonds a semiconductor wafer to a support wafer, and the support wafer is made of transparent material with an opaque surface. The opaque surface covers only the outer annular (ring-shaped) edge of the support wafer, to facilitate optical sensor detection of the wafer edge.
7. The structure of claim 6 , wherein the transparent wafer and opaque surface are separate layers in direct contact with each other.
In this semiconductor structure, the semiconductor wafer is bonded to a support wafer. The support wafer has two distinct layers: a transparent wafer and an opaque surface, that are in direct contact with each other. The opaque layer may be used to facilitate detection of the handling wafer surface by optical sensors.
8. The structure of claim 7 , further comprising a clarifying layer on the opaque surface.
This semiconductor structure features a semiconductor wafer bonded to a support wafer. The support wafer is built from a transparent wafer, an opaque surface directly contacting it, and a clarifying layer sitting on top of the opaque surface. The clarifying layer could modify or orient the opaque layer to allow light to pass.
9. The structure of claim 8 , wherein the clarifying layer includes a similar refractive index as the opaque surface.
The semiconductor structure consists of a semiconductor wafer bonded to a support wafer. The support wafer includes a transparent wafer, an opaque surface, and a clarifying layer on the opaque surface. The clarifying layer has a refractive index similar to that of the opaque surface, so light passes through more unobstructed. The opaque layer may be used to facilitate detection of the handling wafer surface by optical sensors.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 28, 2014
August 8, 2017
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