One illustrative device disclosed herein includes a stepped conductive source/drain structure with a cavity defined therein, the cavity being located vertically above an active region, a non-conductive structure positioned in the cavity, a layer of insulating material positioned above the gate structure, the stepped conductive source/drain structure and the non-conductive structure, a gate contact opening defined in the layer of insulating material and a conductive gate contact positioned in the gate contact opening that is conductively coupled to the gate structure, wherein at least a portion of the conductive gate contact is positioned vertically above the non-conductive structure.
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1. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
A transistor device includes a gate structure and an active region within a semiconducting substrate, surrounded by an isolation region. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touching one of the source/drain regions. This contact has two levels: a lower first surface and a higher second surface. The contact appears stepped in cross-section. A non-conductive structure sits on the lower first surface, its top being level with the higher second surface. An insulating layer covers the gate, stepped contact, and non-conductive structure. A conductive gate contact in the insulating layer connects to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer and touches the higher second surface of the stepped contact.
2. The device of claim 1 , wherein an entirety of said conductive gate contact is positioned vertically above said active region.
This transistor device, as described, has its entire conductive gate contact positioned directly above the active region of the semiconducting substrate. That is, when viewed from above, the gate contact's footprint is completely contained within the area of the active region. The transistor device includes a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
3. The device of claim 1 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
In this transistor device, the stepped conductive source/drain contact, as described, has a total length along the gate width. The lower portion of the stepped contact (the part with the first, lower height) has a length that's 5-80% of the entire contact's length. The transistor device includes a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
4. The device of claim 1 , wherein said first height is approximately 20-70% of said second height.
For this transistor device, as previously described, the height of the first, lower portion of the stepped source/drain contact is approximately 20-70% of the height of the second, higher portion. The transistor device includes a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
5. The device of claim 1 , wherein said transistor device further comprises: a silicon nitride sidewall spacer positioned adjacent said gate structure; and a T-shaped gate cap layer comprising silicon dioxide positioned above said gate structure and above an upper surface of said silicon nitride sidewall spacer, wherein said non-conductive structure comprises a silicon nitride material, and said T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said silicon nitride sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure.
This invention relates to semiconductor devices, specifically to an improved transistor structure designed to enhance performance and reliability. The problem addressed is the need for better insulation and structural integrity in advanced transistor designs, particularly in finFET or gate-all-around (GAA) architectures where gate structures require precise insulation to prevent leakage and ensure proper functionality. The device includes a transistor with a gate structure surrounded by a silicon nitride sidewall spacer. A T-shaped gate cap layer made of silicon dioxide is positioned above the gate structure and the upper surface of the silicon nitride sidewall spacer. The T-shaped cap has a horizontal portion extending over the spacer and a vertical portion that extends downward toward the gate structure. This design ensures robust insulation and structural support, preventing electrical leakage and mechanical degradation. The silicon nitride material used in the non-conductive structure further enhances insulation properties, while the T-shaped cap improves uniformity and stability during manufacturing processes. The combination of these features optimizes transistor performance by minimizing parasitic capacitance and improving gate control over the channel region. This invention is particularly useful in high-density semiconductor devices where precise insulation and structural integrity are critical.
6. The device of claim 1 , wherein said stepped conductive source/drain contact structure comprises a metal silicide material and a conductive metal positioned above said metal silicide material.
In the transistor device, the stepped conductive source/drain contact, as defined previously, is composed of a metal silicide material at its base, and a conductive metal on top of that metal silicide. The transistor device includes a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
7. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a sidewall spacer positioned adjacent said gate structure; a T-shaped gate cap layer positioned above said gate structure and on and in contact with an upper surface of said sidewall spacer, wherein said T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure; a layer of insulating material positioned above said T-shaped gate cap layer, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and said T-shaped cap layer and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
A transistor device contains a gate structure and an active region in a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touches one of the source/drain regions, with a lower first surface and a higher second surface. The contact is stepped in cross-section. A non-conductive structure sits on the lower first surface, its top level with the higher second surface. A sidewall spacer is next to the gate, and a T-shaped gate cap is on the gate and the spacer's top. The cap has a horizontal part above the spacer and a vertical part going down to the gate. An insulating layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer, touching the higher surface of the stepped contact.
8. The device of claim 7 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
The stepped conductive source/drain contact, as described in the previous transistor device, has a total length along the gate width. The lower part of the stepped contact has a length that's 5-80% of the whole contact's length. The transistor device contains a gate structure and an active region in a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touches one of the source/drain regions, with a lower first surface and a higher second surface. The contact is stepped in cross-section. A non-conductive structure sits on the lower first surface, its top level with the higher second surface. A sidewall spacer is next to the gate, and a T-shaped gate cap is on the gate and the spacer's top. The cap has a horizontal part above the spacer and a vertical part going down to the gate. An insulating layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer, touching the higher surface of the stepped contact.
9. The device of claim 7 , wherein said first height is approximately 20-70% of said second height.
In this transistor device, the height of the first, lower portion of the stepped source/drain contact is approximately 20-70% of the height of the second, higher portion. The transistor device contains a gate structure and an active region in a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touches one of the source/drain regions, with a lower first surface and a higher second surface. The contact is stepped in cross-section. A non-conductive structure sits on the lower first surface, its top level with the higher second surface. A sidewall spacer is next to the gate, and a T-shaped gate cap is on the gate and the spacer's top. The cap has a horizontal part above the spacer and a vertical part going down to the gate. An insulating layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer, touching the higher surface of the stepped contact.
10. The device of claim 7 , wherein said sidewall spacer comprises silicon nitride, said T-shaped gate cap layer comprises silicon dioxide, said layer of insulating material comprises silicon dioxide and said non-conductive structure comprises silicon nitride material.
The transistor device described previously consists of a silicon nitride sidewall spacer, a silicon dioxide T-shaped gate cap layer, a silicon dioxide insulating layer, and a non-conductive structure made of silicon nitride material. The transistor device contains a gate structure and an active region in a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touches one of the source/drain regions, with a lower first surface and a higher second surface. The contact is stepped in cross-section. A non-conductive structure sits on the lower first surface, its top level with the higher second surface. A sidewall spacer is next to the gate, and a T-shaped gate cap is on the gate and the spacer's top. The cap has a horizontal part above the spacer and a vertical part going down to the gate. An insulating layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer, touching the higher surface of the stepped contact.
11. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a silicon nitride sidewall spacer positioned adjacent said gate structure; a silicon dioxide T-shaped gate cap layer positioned above said gate structure and on and in contact with an upper surface of said silicon nitride sidewall spacer, wherein said silicon dioxide T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said silicon nitride sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure; a layer of silicon dioxide positioned above said silicon dioxide T-shaped gate cap layer, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and said T-shaped cap layer and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
A transistor device has a gate structure and an active region within a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touching one of the source/drain regions. This contact has two levels: a lower first surface and a higher second surface. The contact appears stepped in cross-section. A non-conductive structure sits on the lower first surface, its top being level with the higher second surface. A silicon nitride sidewall spacer is positioned adjacent the gate structure. A silicon dioxide T-shaped gate cap sits on top of the gate and the sidewall spacer. The cap has a horizontal part above the sidewall spacer and a vertical part towards the gate. A silicon dioxide layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer and touches the higher second surface of the stepped contact.
12. The device of claim 11 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
In this transistor device, the stepped conductive source/drain contact, as described, has a total length along the gate width. The lower portion of the stepped contact has a length that's 5-80% of the entire contact's length. The transistor device has a gate structure and an active region within a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touching one of the source/drain regions. This contact has two levels: a lower first surface and a higher second surface. The contact appears stepped in cross-section. A non-conductive structure sits on the lower first surface, its top being level with the higher second surface. A silicon nitride sidewall spacer is positioned adjacent the gate structure. A silicon dioxide T-shaped gate cap sits on top of the gate and the sidewall spacer. The cap has a horizontal part above the sidewall spacer and a vertical part towards the gate. A silicon dioxide layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer and touches the higher second surface of the stepped contact.
13. The device of claim 11 , wherein said first height is approximately 20-70% of said second height.
For this transistor device, as previously described, the height of the first, lower portion of the stepped source/drain contact is approximately 20-70% of the height of the second, higher portion. The transistor device has a gate structure and an active region within a semiconducting substrate, surrounded by isolation. Source/drain regions are on either side of the gate. A stepped conductive source/drain contact is above and touching one of the source/drain regions. This contact has two levels: a lower first surface and a higher second surface. The contact appears stepped in cross-section. A non-conductive structure sits on the lower first surface, its top being level with the higher second surface. A silicon nitride sidewall spacer is positioned adjacent the gate structure. A silicon dioxide T-shaped gate cap sits on top of the gate and the sidewall spacer. The cap has a horizontal part above the sidewall spacer and a vertical part towards the gate. A silicon dioxide layer covers the T-shaped cap, stepped contact, and non-conductive structure. A conductive gate contact goes through the insulating layer and T-shaped cap, connecting to the gate. Looking from above, the non-conductive structure is on both sides of the gate contact. A source/drain contact is in the insulating layer and touches the higher second surface of the stepped contact.
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October 20, 2015
August 15, 2017
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