One illustrative device disclosed herein includes a stepped conductive source/drain structure with a cavity defined therein, the cavity being located vertically above an active region, a non-conductive structure positioned in the cavity, a layer of insulating material positioned above the gate structure, the stepped conductive source/drain structure and the non-conductive structure, a gate contact opening defined in the layer of insulating material and a conductive gate contact positioned in the gate contact opening that is conductively coupled to the gate structure, wherein at least a portion of the conductive gate contact is positioned vertically above the non-conductive structure.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one of said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
2. The device of claim 1 , wherein an entirety of said conductive gate contact is positioned vertically above said active region.
3. The device of claim 1 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
4. The device of claim 1 , wherein said first height is approximately 20-70% of said second height.
5. The device of claim 1 , wherein said transistor device further comprises: a silicon nitride sidewall spacer positioned adjacent said gate structure; and a T-shaped gate cap layer comprising silicon dioxide positioned above said gate structure and above an upper surface of said silicon nitride sidewall spacer, wherein said non-conductive structure comprises a silicon nitride material, and said T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said silicon nitride sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure.
6. The device of claim 1 , wherein said stepped conductive source/drain contact structure comprises a metal silicide material and a conductive metal positioned above said metal silicide material.
7. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting one said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a sidewall spacer positioned adjacent said gate structure; a T-shaped gate cap layer positioned above said gate structure and on and in contact with an upper surface of said sidewall spacer, wherein said T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure; a layer of insulating material positioned above said T-shaped gate cap layer, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and said T-shaped cap layer and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
8. The device of claim 7 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
9. The device of claim 7 , wherein said first height is approximately 20-70% of said second height.
10. The device of claim 7 , wherein said sidewall spacer comprises silicon nitride, said T-shaped gate cap layer comprises silicon dioxide, said layer of insulating material comprises silicon dioxide and said non-conductive structure comprises silicon nitride material.
11. A transistor device, comprising: a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; source/drain regions disposed on opposing sides of said gate structure, wherein a gate width direction is defined in a direction extending between said source/drain regions and a gate length direction is defined in a direction perpendicular to said gate width direction along an axial length of said gate structure; a stepped conductive source/drain contact structure formed above and contacting said source/drain regions and having a first upper surface with a first height and a second upper surface with a second height greater than said first height, wherein said stepped conductive source/drain contact structure has a stepped configuration when viewed in cross-sectional view taken along through said stepped conductive source/drain contact structure in a direction corresponding to said gate width direction; a non-conductive structure positioned above and contacting said first upper surface and having a third upper surface coplanar with said second upper surface; a silicon nitride sidewall spacer positioned adjacent said gate structure; a silicon dioxide T-shaped gate cap layer positioned above said gate structure and on and in contact with an upper surface of said silicon nitride sidewall spacer, wherein said silicon dioxide T-shaped gate cap layer has a horizontal portion disposed above said upper surface of said silicon nitride sidewall spacer and a vertical portion extending down from said horizontal portion toward said gate structure; a layer of silicon dioxide positioned above said silicon dioxide T-shaped gate cap layer, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and said T-shaped cap layer and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.
12. The device of claim 11 , wherein said stepped conductive source/drain contact structure has an overall axial length in said gate width direction and a portion of said stepped conductive source/drain contact structure having said first height has an axial length that is approximately 5-80% of said overall axial length of said stepped conductive source/drain contact structure.
13. The device of claim 11 , wherein said first height is approximately 20-70% of said second height.
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October 20, 2015
August 15, 2017
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