According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A group III-V semiconductor device comprising: at least one buffer layer situated over a substrate; at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials; a first strain-relieving interlayer situated over said at least one transition layer and a second strain-relieving interlayer situated over said first strain-relieving interlayer; and a first group III-V semiconductor body situated over said second strain-relieving interlayer, wherein said first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in said first group III-V semiconductor body, wherein said first strain-relieving interlayer has a thickness greater than or substantially equal to 0.2 micrometers, wherein said second strain-relieving interlayer has a thickness greater than or substantially equal to 0.01 micrometers, wherein said first strain-relieving interlayer is thicker than said second strain-relieving interlayer.
A group III-V semiconductor device includes a buffer layer on a substrate and a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials. A first strain-relieving interlayer (>= 0.2 micrometers thick) is located above the transition layer, and a second strain-relieving interlayer (>= 0.01 micrometers thick) is located above the first. The first strain-relieving layer is thicker than the second. A group III-V semiconductor body is located above the second strain-relieving interlayer. The two strain-relieving interlayers use different semiconductor materials to reduce strain in the group III-V semiconductor body.
2. The group III-V semiconductor device of claim 1 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first strain-relieving interlayer is gallium nitride (GaN).
3. The group III-V semiconductor device of claim 1 , wherein said second strain-relieving interlayer comprises aluminum nitride (AlN).
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the second strain-relieving interlayer is aluminum nitride (AlN).
4. The group III-V semiconductor device of claim 1 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the transition layer includes a first AlGaN transition layer and a second AlGaN transition layer, with the second transition layer having a lower aluminum composition than the first.
5. The group III-V semiconductor device of claim 1 , further comprising a second group III-V semiconductor body situated over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) forms at a heterojunction of said first and second group III-V semiconductor bodies.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, further comprising a second group III-V semiconductor body located above the first group III-V semiconductor body, where a two-dimensional electron gas (2DEG) forms at the junction of the first and second bodies.
6. The group III-V semiconductor device of claim 1 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
7. The group III-V semiconductor device of claim 1 , wherein said first group III-V semiconductor body has a thickness in a range between 2.5 microns and 5.0 microns.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first group III-V semiconductor body has a thickness between 2.5 and 5.0 microns.
8. A group III-V semiconductor device comprising: at least one buffer layer situated over a substrate; at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials; a first strain-relieving interlayer situated over said at least one transition layer and a second strain-relieving interlayer situated over said first strain-relieving interlayer; and a first group III-V semiconductor body situated over said second strain-relieving interlayer, wherein said first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in said first group III-V semiconductor body, wherein said first strain-relieving interlayer has a thickness greater than or substantially equal to 0.2 micrometers, wherein said second strain-relieving interlayer has a thickness greater than or substantially equal to 0.01 micrometers, wherein said first group III-V semiconductor body has a thickness greater 2.5 microns, wherein said first strain-relieving interlayer is thicker than said second strain-relieving interlayer, wherein said second strain-relieving interlayer comprises an aluminum nitride (AlN) layer.
A group III-V semiconductor device includes a buffer layer on a substrate and a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials. A first strain-relieving interlayer (>= 0.2 micrometers thick) is located above the transition layer, and a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) is located above the first. The first strain-relieving layer is thicker than the second. A group III-V semiconductor body with a thickness greater than 2.5 microns is located above the second strain-relieving interlayer. The two strain-relieving interlayers use different semiconductor materials to reduce strain in the group III-V semiconductor body.
9. The group III-V semiconductor device of claim 8 , further comprising a buffer layer disposed between said substrate and said at least one transition layer.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, further comprising a buffer layer disposed between the substrate and the transition layer.
10. The group III-V semiconductor device of claim 8 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first strain-relieving interlayer is gallium nitride (GaN).
11. The group III-V semiconductor device of claim 8 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the transition layer includes a first AlGaN transition layer and a second AlGaN transition layer, with the second transition layer having a lower aluminum composition than the first.
12. The group III-V semiconductor device of claim 8 , further comprising a second group III-V semiconductor body situated over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) forms at a heterojunction of said first and second group III-V semiconductor bodies.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, further comprising a second group III-V semiconductor body located above the first group III-V semiconductor body, where a two-dimensional electron gas (2DEG) forms at the junction of the first and second bodies.
13. The group III-V semiconductor device of claim 8 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
14. The group III-V semiconductor device of claim 8 , wherein said first group III-V semiconductor body has a thickness in a range between 2.5 microns and 5.0 microns.
The group III-V semiconductor device described as containing a buffer layer on a substrate; a transition layer on the buffer layer, where the buffer and transition layers are made of different semiconductor materials; a first strain-relieving interlayer (>= 0.2 micrometers thick) above the transition layer; a second strain-relieving interlayer (>= 0.01 micrometers thick) comprised of aluminum nitride (AlN) above the first, where the first strain-relieving layer is thicker than the second; and a group III-V semiconductor body with a thickness greater than 2.5 microns above the second strain-relieving interlayer, where the two strain-relieving interlayers use different semiconductor materials to reduce strain in the semiconductor body, where the first group III-V semiconductor body has a thickness between 2.5 and 5.0 microns.
15. A method for forming a group III-V semiconductor device over a substrate, said method comprising: forming at least one buffer layer situated over said substrate; forming at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials; forming a first strain-relieving interlayer of a thickness greater than or substantially equal to 0.2 micrometers over said at least one transition layer and a second strain-relieving interlayer of a thickness greater than or substantially equal to 0.01 micrometers over said first strain-relieving interlayer, said first and second strain-relieving interlayers comprising different group III-V semiconductor materials, said first strain-relieving interlayer being thicker than said second strain-relieving interlayer; and forming a first group III-V semiconductor body over said second strain-relieving interlayer.
A method for forming a group III-V semiconductor device on a substrate involves depositing at least one buffer layer on the substrate, followed by at least one transition layer made of a different material than the buffer layer. Next, a first strain-relieving interlayer (>= 0.2 micrometers thick) is deposited, followed by a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first strain-relieving layer being thicker than the second. The two strain-relieving interlayers are made of different group III-V semiconductor materials. Finally, a first group III-V semiconductor body is deposited on the second strain-relieving interlayer.
16. The method of claim 15 , wherein said first strain-relieving interlayer comprises gallium nitride (GaN).
The method of creating a group III-V semiconductor device on a substrate by depositing at least one buffer layer; depositing at least one transition layer made of a different material; depositing a first strain-relieving interlayer (>= 0.2 micrometers thick); depositing a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first layer being thicker; using different group III-V materials for the strain-relieving interlayers; and depositing a first group III-V semiconductor body, where the first strain-relieving interlayer is gallium nitride (GaN).
17. The method of claim 15 , wherein said second strain-relieving interlayer comprises aluminum nitride (AlN).
The method of creating a group III-V semiconductor device on a substrate by depositing at least one buffer layer; depositing at least one transition layer made of a different material; depositing a first strain-relieving interlayer (>= 0.2 micrometers thick); depositing a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first layer being thicker; using different group III-V materials for the strain-relieving interlayers; and depositing a first group III-V semiconductor body, where the second strain-relieving interlayer is aluminum nitride (AlN).
18. The method of claim 15 , wherein said at least one transition layer comprises a first transition layer of aluminum gallium nitride (AlGaN) and a second transition layer of aluminum gallium nitride (AlGaN), wherein said second transition layer has a lower aluminum composition than said first transition layer.
The method of creating a group III-V semiconductor device on a substrate by depositing at least one buffer layer; depositing at least one transition layer made of a different material; depositing a first strain-relieving interlayer (>= 0.2 micrometers thick); depositing a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first layer being thicker; using different group III-V materials for the strain-relieving interlayers; and depositing a first group III-V semiconductor body, where the transition layer includes a first AlGaN transition layer and a second AlGaN transition layer, with the second transition layer having a lower aluminum composition than the first.
19. The method of claim 15 , further comprising forming a second group III-V semiconductor body over said first group III-V semiconductor body, wherein a two-dimensional electron gas (2DEG) is formed at a heterojunction of said first and second group III-V semiconductor bodies.
The method of creating a group III-V semiconductor device on a substrate by depositing at least one buffer layer; depositing at least one transition layer made of a different material; depositing a first strain-relieving interlayer (>= 0.2 micrometers thick); depositing a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first layer being thicker; using different group III-V materials for the strain-relieving interlayers; depositing a first group III-V semiconductor body; and then depositing a second group III-V semiconductor body above the first, where a two-dimensional electron gas (2DEG) forms at the junction of the first and second bodies.
20. The method of claim 15 , wherein said first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
The method of creating a group III-V semiconductor device on a substrate by depositing at least one buffer layer; depositing at least one transition layer made of a different material; depositing a first strain-relieving interlayer (>= 0.2 micrometers thick); depositing a second strain-relieving interlayer (>= 0.01 micrometers thick), with the first layer being thicker; using different group III-V materials for the strain-relieving interlayers; and depositing a first group III-V semiconductor body, where the first group III-V semiconductor body provides a breakdown voltage greater than approximately 500 volts.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 13, 2016
August 22, 2017
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.