A semiconductor device of the present invention includes a transistor having a drain and a source, a voltage being applied between the drain and the source from a high-voltage power supply, a drive device that generates a source voltage and a gate voltage for the transistor from a voltage of a low-voltage power supply lower than that of the high-voltage power supply, and a voltage dividing circuit connected to the low-voltage power supply, wherein when the source voltage is lower than a certain value, an output voltage from the voltage dividing circuit is applied to the source.
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1. A semiconductor device comprising: a transistor having a drain and a source, a voltage being applied between the drain and the source from a high-voltage power supply; a drive device that generates a source voltage and a gate voltage for the transistor from a voltage of a low-voltage power supply lower than that of the high-voltage power supply; and a voltage dividing circuit connected to the low-voltage power supply, wherein when the source voltage is lower than a certain value, an output voltage from the voltage dividing circuit is applied to the source.
A semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. This helps maintain proper transistor operation at low source voltage.
2. The semiconductor device according to claim 1 , further comprising a zener-diode having an anode connected to the source and a cathode connected to an output of the voltage dividing circuit, wherein a breakdown voltage of the zener-diode is lower than the output voltage from the voltage dividing circuit.
The semiconductor device, which has a transistor with a drain and source connected to a high-voltage power supply and a drive device that uses a low-voltage power supply to control the transistor's gate and source voltage, and a voltage divider that supplies voltage to the source when its voltage is low, includes a zener diode. The zener diode's anode connects to the transistor's source, and its cathode connects to the voltage dividing circuit's output. The zener diode's breakdown voltage is lower than the output voltage from the voltage dividing circuit, providing voltage regulation.
3. The semiconductor device according to claim 2 , further comprising a resistance element connected in series to wiring connecting the output of the voltage dividing circuit, the zener-diode, and the source.
The semiconductor device, which has a transistor with a drain and source connected to a high-voltage power supply and a drive device that uses a low-voltage power supply to control the transistor's gate and source voltage, a voltage divider that supplies voltage to the source when its voltage is low, and a zener diode that regulates the voltage supplied by the voltage divider, also includes a resistor. This resistor is connected in series with the wiring connecting the voltage dividing circuit's output, the zener diode, and the transistor's source. The resistor limits current flow to the source.
4. The semiconductor device according to claim 3 , wherein the voltage of the high-voltage power supply is in a range from 600 to 1200 V, wherein the voltage of the low-voltage power supply is 12 V, and wherein a resistance value of the resistance element is equal to or higher than 2 MΩ.
The semiconductor device, which has a transistor with a drain and source connected to a high-voltage power supply and a drive device that uses a low-voltage power supply to control the transistor's gate and source voltage, a voltage divider that supplies voltage to the source when its voltage is low, a zener diode, and a resistor connected in series between the voltage divider and source, has these specific voltage and resistance values. The high-voltage power supply ranges from 600 to 1200V. The low-voltage power supply is 12V. The resistor's resistance value is at least 2 MΩ.
5. The semiconductor device according to claim 1 , wherein the drive device sets the gate voltage higher than the source voltage when the transistor is turned on, and sets the source voltage higher than the gate voltage when the transistor is turned off.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. The drive device sets the gate voltage higher than the source voltage when the transistor is on, and sets the source voltage higher than the gate voltage when the transistor is off.
6. The semiconductor device according to claim 1 , wherein the transistor constitutes a lower arm of an inverter circuit.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. In this case, the transistor functions as the lower switch (lower arm) of an inverter circuit.
7. The semiconductor device according to claim 1 , further comprising a switch for electrically connecting or disconnecting the output of the voltage dividing circuit to or from the source, wherein the switch electrically connects the output of the voltage dividing circuit to the source when a shutoff signal provided as a signal for shutting off the transistor is transmitted from an outside to the drive device or when the drive device outputs an abnormality signal indicating an abnormality to the outside, and electrically disconnects the output of the voltage dividing circuit from the source in other cases.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. A switch connects or disconnects the voltage dividing circuit's output to the source. The switch connects when a shutoff signal is received or the drive device detects a fault, and disconnects otherwise.
8. The semiconductor device according to claim 1 , further comprising: a boosting block; and an inverter block, wherein the transistor includes a first transistor formed in the boosting block; and a second transistor formed in the inverter block, wherein the drive device includes a first drive device that generates a gate voltage and a source voltage for the first transistor; and a second drive device that generates a gate voltage and a source voltage for the second transistor, wherein the semiconductor device further comprises: a first switch that electrically connects or disconnects the output of the voltage dividing circuit to or from the source of the first transistor; and a second switch that electrically connects or disconnects the output of the voltage dividing circuit to or from the source of the second transistor, wherein the first switch electrically connects the output of the voltage dividing circuit to the source of the first transistor when the first drive device outputs a first abnormality signal indicating an abnormality to the outside, and electrically disconnects the output of the voltage dividing circuit from the source of the first transistor when the first abnormality signal is not output, and wherein the second switch electrically connects the output of the voltage dividing circuit to the source of the second transistor when the second drive device outputs a second abnormality signal indicating an abnormality to the outside, and electrically disconnects the output of the voltage dividing circuit from the source of the second transistor when the second abnormality signal is not output.
The semiconductor device includes a boosting block and an inverter block. It contains two transistors, one in each block, with each transistor having a drain and a source and having voltage applied between them from a high-voltage power supply. A voltage dividing circuit is connected to a low-voltage power supply. There are two drive devices, one for each transistor, generating gate and source voltages from the low-voltage power supply. There are also two switches, one for each transistor, that connect or disconnect the voltage dividing circuit's output to the source of their respective transistors. The switches connect the voltage divider when their respective drive device signals a fault and disconnect otherwise.
9. The semiconductor device according to claim 1 , wherein the transistor is of a normally-off transistor.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. In this version, the transistor is a normally-off type.
10. The semiconductor device according to claim 1 , wherein the transistor is of a normally-on transistor.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. In this version, the transistor is a normally-on type.
11. The semiconductor device according to claim 1 , wherein the transistor is formed out of a wide-bandgap semiconductor.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. The transistor is made of a wide-bandgap semiconductor material.
12. The semiconductor device according to claim 11 , wherein the wide-bandgap semiconductor is silicon carbide, a gallium nitride-based material or diamond.
The semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). There's also a voltage dividing circuit connected to the low-voltage supply. When the transistor's source voltage dips below a specific threshold, the voltage dividing circuit's output voltage is then applied to the transistor's source. The transistor is made of a wide-bandgap semiconductor, specifically silicon carbide, a gallium nitride-based material, or diamond.
13. A semiconductor device comprising: a transistor having a drain and a source, a voltage being applied between the drain and the source from a high-voltage power supply; a drive device that generates a source voltage and a gate voltage for the transistor from a voltage of a low-voltage power supply lower than that of the high-voltage power supply; and a disconnecting part electrically connected to the low-voltage power supply, the disconnecting part electrically disconnecting the high-voltage power supply from the transistor when the voltage of the low-voltage power supply is lower than a voltage necessary for maintaining the transistor in an ON-state or an OFF-state.
A semiconductor device includes a transistor that has a drain and a source, with a high-voltage power supply applying voltage between them. A drive device creates the transistor's source and gate voltages using a low-voltage power supply (lower voltage than the high-voltage one). It also includes a disconnecting part connected to the low-voltage power supply. This disconnecting part electrically disconnects the high-voltage power supply from the transistor when the low-voltage power supply's voltage is too low to keep the transistor properly on or off.
14. An automobile comprising: a motor; a transistor having a drain and a source, a voltage being applied between the drain and the source from a high-voltage power supply; a drive device that generates a source voltage and a gate voltage for the transistor from an output voltage of a low-voltage power supply lower than that of the high-voltage power supply; and a voltage dividing circuit connected to the low-voltage power supply, wherein when the source voltage is lower than a certain value, an output voltage from the voltage dividing circuit is applied to the source.
An automobile contains a motor and a semiconductor device. The semiconductor device has a transistor with a drain and source, a high-voltage power supply that applies voltage to it, and a drive device that generates the gate and source voltages from a low-voltage power supply. A voltage dividing circuit connected to the low-voltage supply applies an output voltage to the transistor's source when the source voltage is below a threshold, thereby helping to control the transistor operation connected to the motor.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 13, 2012
August 22, 2017
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