The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the method comprising: a neutral layer forming step of forming, on the substrate, a neutral layer having an intermediate affinity to the hydrophilic polymer and the hydrophobic polymer; a resist pattern forming step of forming a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing, wherein the resist pattern is formed of an ArF resist; a resist pattern treatment step of performing a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; a block copolymer coating step of applying the block copolymer onto the neutral layer; a polymer separation step of phase-separating the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer; and after the resist pattern forming step and before the resist pattern treatment step, a resist modification processing step of performing modification processing on a surface of the resist pattern by applying ultraviolet light to the resist pattern.
A method for treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer. First, a neutral layer is formed on the substrate, this layer having an intermediate affinity to both polymers. Next, a resist pattern (made of an ArF resist) is formed by exposing a resist film on the neutral layer and then developing it. Before treating the resist pattern with a polar organic solvent, the surface of the resist pattern is modified by applying ultraviolet light. Finally, the block copolymer is applied and phase-separated into its hydrophilic and hydrophobic polymer components on the neutral layer.
2. The substrate treatment method according to claim 1 , wherein in the resist pattern forming step, the resist pattern forming step and the resist pattern treatment step are performed in parallel by supplying the organic solvent having a polarity in addition to a developing solution to the resist film after the exposure to develop the resist film.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. In this variation, the resist pattern formation and treatment steps are performed simultaneously by using a developing solution mixed with a polar organic solvent after the resist film is exposed.
3. The substrate treatment method according to claim 1 , wherein the resist pattern treatment step is to remove the resist film existing in an intermediate region between an exposed region and an unexposed region of the resist film to bare a surface of the resist film in the unexposed region.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. The organic solvent treatment removes the resist film from the intermediate region between exposed and unexposed areas, exposing the resist film surface in the unexposed regions.
4. The substrate treatment method according to claim 1 , further comprising: a polymer removing step of selectively removing either the hydrophilic polymer or the hydrophobic polymer from the phase-separated block copolymer.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. It further includes selectively removing either the hydrophilic or hydrophobic polymer from the phase-separated block copolymer after the separation step.
5. The substrate treatment method according to claim 4 , wherein in the polymer removing step, either the hydrophilic polymer or the hydrophobic polymer is selectively removed by plasma etching processing or by supply of an organic solvent.
The substrate treatment method includes the steps: forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), phase-separating the copolymer, and selectively removing either the hydrophilic or hydrophobic polymer from the phase-separated block copolymer. The polymer removal is done using either plasma etching or by applying an organic solvent.
6. The substrate treatment method according to claim 1 , wherein the resist pattern is a pattern having a linear line portion and a linear space portion in planar view, and wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is 40% to 60%.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. The resist pattern has a linear line portion and a linear space portion when viewed from above. The hydrophilic polymer constitutes 40% to 60% of the block copolymer's molecular weight.
7. The substrate treatment method according to claim 1 , wherein the resist pattern is a pattern having a circular space portion in planar view, and wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is 20% to 40%.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. The resist pattern has circular space portions when viewed from above. The hydrophilic polymer makes up 20% to 40% of the block copolymer's molecular weight.
8. The substrate treatment method according to claim 1 , wherein the hydrophilic polymer is polymethyl methacrylate, and wherein the hydrophobic polymer is polystyrene.
The substrate treatment method involves forming a neutral layer on a substrate, creating a resist pattern using ArF resist through exposure and development, treating the resist pattern with a polar organic solvent, applying a block copolymer (hydrophilic and hydrophobic polymers), and phase-separating the copolymer. The hydrophilic polymer used is polymethyl methacrylate (PMMA) and the hydrophobic polymer is polystyrene.
9. A method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the method comprising: a neutral layer forming step of forming, on the substrate, a neutral layer having an intermediate affinity to the hydrophilic polymer and the hydrophobic polymer; a resist pattern forming step of forming a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing, wherein the resist pattern is formed of an ArF resist; a resist pattern treatment step of performing a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; a block copolymer coating step of applying the block copolymer onto the neutral layer; and a polymer separation step of phase-separating the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer; wherein in the resist pattern forming step, the resist pattern forming step and the resist pattern treatment step are performed in parallel by supplying the organic solvent having a polarity in addition to a developing solution to the resist film after the exposure to develop the resist film, wherein the resist pattern treatment step, which is performed in parallel with the resist pattern forming step, is to remove the resist film existing in an intermediate region between an exposed region and an unexposed region of the resist film to bare a surface of the resist film in the unexposed region.
A method for treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer. First, a neutral layer is formed on the substrate, this layer having an intermediate affinity to both polymers. Next, a resist pattern (made of an ArF resist) is formed by exposing a resist film on the neutral layer and then developing it. The resist pattern is treated with a polar organic solvent. Then the block copolymer is applied and phase-separated into its hydrophilic and hydrophobic polymer components on the neutral layer. The resist pattern formation and treatment are done concurrently by supplying a polar organic solvent mixed with a developing solution after exposure. The solvent treatment removes resist film in the intermediate region between exposed and unexposed areas, exposing the surface of the resist film in the unexposed regions.
10. A non-transitory computer-readable storage medium storing a program running on a computer of a control unit controlling a substrate treatment system to cause the substrate treatment system to perform a method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate treatment method comprising: a neutral layer forming step of forming, on the substrate, a neutral layer having an intermediate affinity to the hydrophilic polymer and the hydrophobic polymer; a resist pattern forming step of forming a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing, wherein the resist pattern is formed of an ArF resist; a resist pattern treatment step of performing a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; a block copolymer coating step of applying the block copolymer onto the neutral layer; a polymer separation step of phase-separating the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer; and after the resist pattern forming step and before the resist pattern treatment step, a resist modification processing step of performing modification processing on a surface of the resist pattern by applying ultraviolet light to the resist pattern.
A non-transitory computer-readable storage medium stores a program that controls a substrate treatment system to perform a method for treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer. The method involves: forming a neutral layer on the substrate, the layer having an intermediate affinity to both polymers; forming a resist pattern (ArF resist) by exposing and developing a resist film on the neutral layer; modifying the resist pattern surface by applying ultraviolet light; treating the pattern with a polar organic solvent; applying the block copolymer; and phase-separating the block copolymer into its constituent polymers. The UV light modification of the resist pattern occurs after the resist pattern is formed but before the organic solvent is supplied.
11. The non-transitory computer-readable storage medium according to claim 10 , wherein in the resist pattern forming step, the resist pattern forming step and the resist pattern treatment step are performed in parallel by supplying the organic solvent having a polarity in addition to a developing solution to the resist film after the exposure to develop the resist film.
A non-transitory computer-readable storage medium stores a program controlling a substrate treatment system. The system performs a method: forming a neutral layer on a substrate; creating a resist pattern using ArF resist through exposure and development; treating the resist pattern with a polar organic solvent; applying a block copolymer; and phase-separating the copolymer. The resist pattern formation and treatment steps are performed simultaneously. The resist film is exposed and then developed using a developing solution that contains a polar organic solvent.
12. The non-transitory computer-readable storage medium according to claim 10 , wherein the resist pattern treatment step is to remove the resist film existing in an intermediate region between an exposed region and an unexposed region of the resist film to bare a surface of the resist film in the unexposed region.
A non-transitory computer-readable storage medium stores a program controlling a substrate treatment system. The system performs a method: forming a neutral layer on a substrate; creating a resist pattern using ArF resist through exposure and development; treating the resist pattern with a polar organic solvent; applying a block copolymer; and phase-separating the copolymer. The organic solvent treatment removes the resist film from the intermediate region between exposed and unexposed regions of the resist film, exposing the surface of the resist film in the unexposed region.
13. The non-transitory computer-readable storage medium according to claim 10 , further comprising: a polymer removing step of selectively removing either the hydrophilic polymer or the hydrophobic polymer from the phase-separated block copolymer.
A non-transitory computer-readable storage medium stores a program controlling a substrate treatment system. The system performs a method: forming a neutral layer on a substrate; creating a resist pattern using ArF resist through exposure and development; treating the resist pattern with a polar organic solvent; applying a block copolymer; phase-separating the copolymer; and selectively removing either the hydrophilic or hydrophobic polymer from the phase-separated block copolymer.
14. The non-transitory computer-readable storage medium according to claim 10 , wherein in the polymer removing step, either the hydrophilic polymer or the hydrophobic polymer is selectively removed by plasma etching processing or by supply of an organic solvent.
A non-transitory computer-readable storage medium stores a program controlling a substrate treatment system. The system performs a method: forming a neutral layer on a substrate; creating a resist pattern using ArF resist through exposure and development; treating the resist pattern with a polar organic solvent; applying a block copolymer; phase-separating the copolymer; and selectively removing either the hydrophilic or hydrophobic polymer from the phase-separated block copolymer. The polymer removal is performed via plasma etching or using an organic solvent to dissolve the desired polymer.
15. A system for treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the system comprising: a neutral layer forming apparatus that forms, on the substrate, a neutral layer having an intermediate affinity to the hydrophilic polymer and the hydrophobic polymer; a developing apparatus that forms a resist pattern by performing a developing treatment on a resist film after exposure processing formed on the neutral layer, wherein the resist pattern is formed of an ArF resist; a resist pattern treatment apparatus that performs a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern after the developing treatment; a block copolymer coating apparatus that applies the block copolymer onto the neutral layer; a polymer separation apparatus that phase-separates the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer; and a resist modification processing apparatus that performs modification processing on a surface of the resist pattern by applying ultraviolet light to the resist pattern after the resist pattern is formed and before the organic solvent is supplied to the resist pattern.
A substrate treatment system uses a block copolymer containing hydrophilic and hydrophobic polymers. It includes: a neutral layer forming apparatus to create a neutral layer on the substrate; a developing apparatus to form a resist pattern (ArF resist) by developing an exposed resist film; a resist pattern treatment apparatus that treats the resist pattern with a polar organic solvent after development; a copolymer coating apparatus to apply the block copolymer; a separation apparatus to phase-separate the copolymer; and a resist modification apparatus to apply ultraviolet light to modify the resist pattern surface. The UV light treatment occurs after the resist pattern is formed but before the organic solvent is applied.
16. The substrate treatment system according to claim 15 , wherein the developing apparatus supplies the organic solvent having a polarity in addition to a developing solution to the resist film after the exposure to perform a developing treatment on the resist film.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; and a separation apparatus to phase-separate the copolymer. The developing apparatus uses a developing solution mixed with a polar organic solvent to develop the exposed resist film.
17. The substrate treatment system according to claim 15 , wherein the resist pattern treatment apparatus removes the resist film existing in an intermediate region between an exposed region and an unexposed region of the resist film to bare a surface of the resist film in the unexposed region.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; and a separation apparatus to phase-separate the copolymer. The resist pattern treatment apparatus removes the resist film existing in an intermediate region between exposed and unexposed regions of the resist film, exposing the surface of the resist film in the unexposed region.
18. The substrate treatment system according to claim 15 , further comprising: a polymer removing apparatus that selectively removes either the hydrophilic polymer or the hydrophobic polymer from the phase-separated block copolymer.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; a separation apparatus to phase-separate the copolymer; and a polymer removing apparatus that selectively removes either the hydrophilic or hydrophobic polymer from the separated copolymer.
19. The substrate treatment system according to claim 18 , wherein the polymer removing apparatus is a plasma etching apparatus or a solvent supply apparatus that supplies an organic solvent, which selectively removes either the hydrophilic polymer or the hydrophobic polymer.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; a separation apparatus to phase-separate the copolymer; and a polymer removing apparatus that selectively removes either the hydrophilic or hydrophobic polymer. The polymer removal apparatus is either a plasma etching apparatus or a solvent supply apparatus that supplies an organic solvent to selectively remove a polymer.
20. The substrate treatment system according to claim 15 , wherein the resist pattern is a pattern having a linear line portion and a linear space portion in planar view, and wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is 40% to 60%.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; and a separation apparatus to phase-separate the copolymer. The resist pattern has a linear line portion and a linear space portion in planar view. The hydrophilic polymer in the copolymer constitutes 40% to 60% of the copolymer's molecular weight.
21. The substrate treatment system according to claim 15 , wherein the resist pattern is a pattern having a circular space portion in planar view, and wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is 20% to 40%.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; and a separation apparatus to phase-separate the copolymer. The resist pattern has a circular space portion in planar view. The hydrophilic polymer in the block copolymer constitutes 20% to 40% of the copolymer's molecular weight.
22. The substrate treatment system according to claim 15 , wherein the hydrophilic polymer is polymethyl methacrylate, and wherein the hydrophobic polymer is polystyrene.
A substrate treatment system includes: a neutral layer forming apparatus; a developing apparatus to form a resist pattern from an ArF resist; a resist pattern treatment apparatus that treats the pattern with a polar organic solvent; a copolymer coating apparatus to apply a block copolymer; and a separation apparatus to phase-separate the copolymer. The hydrophilic polymer is polymethyl methacrylate (PMMA) and the hydrophobic polymer is polystyrene.
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September 27, 2013
August 29, 2017
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