A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.
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1. A method of manufacturing a semiconductor light emitting device comprising: forming a substructure including at least one light emitting region and at least one electrode region; and forming a plurality of light emitting nanostructures of different wavelengths in a common pattern in the at least one light emitting region by varying an indium (In) composition ratio in an active layer of each of the plurality of light emitting nanostructures.
A method of manufacturing a semiconductor light emitting device involves creating a base structure containing light emitting and electrode areas. Then, multiple light emitting nanostructures with varying wavelengths are formed within the light emitting area, all arranged in a repeating pattern. The different wavelengths are achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure.
2. The method of claim 1 , wherein the indium (In) composition ratio is varied by varying a growth temperature of the plurality of light emitting nanostructures.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, controls the Indium composition ratio by adjusting the growth temperature during the nanostructure formation. Specifically, different growth temperatures result in different Indium incorporation rates, leading to the wavelength variation.
3. The method of claim 1 , wherein the indium (In) composition ratio is varied by varying an indium (In) source flow rate.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, controls the Indium composition ratio by adjusting the Indium source flow rate during the nanostructure formation. Changing the flow rate of the Indium source alters the amount of Indium incorporated into the active layer.
4. The method of claim 1 , wherein forming the plurality of light emitting nanostructures in the common pattern in the at least one light emitting region includes forming the plurality of light emitting nanostructures in at least three light emitting regions, each having a different pitch.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures in at least three separate light emitting regions. Each of these regions has a different spacing (pitch) between the nanostructures.
5. The method of claim 4 , wherein the plurality of light emitting nanostructures with greater pitches are formed with at least one of a greater growth thickness, a greater Indium (In) content and a greater wavelength.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in at least three separate light emitting regions (each having a different spacing (pitch) between the nanostructures), dictates that nanostructures with larger spacing also have a greater growth thickness, a higher Indium (In) content, and emit light with a longer wavelength.
6. The method of claim 1 , wherein the substructure is formed by: providing a substrate, forming a base layer on the substrate, and forming a mask layer on the base layer.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the base structure by first providing a substrate, then depositing a base layer on the substrate, followed by forming a mask layer on top of the base layer.
7. The method of claim 6 , wherein the plurality of light emitting nanostructures are formed by: forming a mold layer on the mask layer; forming openings in the mold layer; forming a plurality of first conductivity-type semiconductor cores in the openings in the mold layer; forming an active layer on each of the plurality of first conductivity-type semiconductor cores; and forming a second conductivity-type semiconductor shell on each of the active layers to form the plurality of light emitting nanostructures.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures by: depositing a mold layer on the mask layer; creating openings in the mold layer; growing semiconductor cores of a first conductivity type within these openings; depositing an active layer on each core; and finally, forming a semiconductor shell of a second conductivity type on each active layer.
8. The method of claim 7 , wherein forming the plurality of first conductivity-type semiconductor cores in the openings in the mold layer includes performing a re-growth process.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures by: depositing a mold layer on the mask layer; creating openings in the mold layer; growing semiconductor cores of a first conductivity type within these openings using a re-growth process; depositing an active layer on each core; and finally, forming a semiconductor shell of a second conductivity type on each active layer. The re-growth process is a method of growing a crystalline structure on an existing crystalline structure, often used to improve crystal quality or create specific doping profiles.
9. The method of claim 7 , further comprising: removing the mold layer and leaving the mask layer by selective etching to prevent the active layer and the second conductivity-type semiconductor shell from contacting the base layer.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures by: depositing a mold layer on the mask layer; creating openings in the mold layer; growing semiconductor cores of a first conductivity type within these openings; depositing an active layer on each core; forming a semiconductor shell of a second conductivity type on each active layer; and then removes the mold layer using a selective etching process that leaves the mask layer intact. This prevents the active layer and the second conductivity-type semiconductor shell from directly contacting the base layer.
10. The method of claim 9 , further comprising: forming a first conductivity-type electrode of a first conductivity-type in a first electrode region and forming a second conductivity-type electrode of a second conductivity-type in a second electrode region.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures by: depositing a mold layer on the mask layer; creating openings in the mold layer; growing semiconductor cores of a first conductivity type within these openings; depositing an active layer on each core; forming a semiconductor shell of a second conductivity type on each active layer; removes the mold layer using a selective etching process that leaves the mask layer intact; and then adds a first conductivity-type electrode in a first electrode region and a second conductivity-type electrode in a second electrode region.
11. The method of claim 7 , wherein forming each three-dimensional (3-D) nanostructure further includes forming a current blocking intermediate layer on a portion of each of the plurality of first conductivity-type semiconductor cores.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure) arranged in a repeating pattern, forms the nanostructures by: depositing a mold layer on the mask layer; creating openings in the mold layer; growing semiconductor cores of a first conductivity type within these openings; depositing an active layer on each core; forming a semiconductor shell of a second conductivity type on each active layer; and further includes depositing a current-blocking intermediate layer on a portion of each semiconductor core.
12. The method of claim 1 , wherein the common pattern is a hexagonal pattern of differing pitches.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the active layer of each nanostructure), arranges the nanostructures in a hexagonal pattern with varying spacing (pitch) between them.
13. The method of claim 1 , wherein forming the plurality of light emitting nanostructures of different wavelengths includes forming the active layer of each of the plurality of light emitting nanostructures as a single quantum well.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths, uses a single quantum well as the active layer in each of the light emitting nanostructures. The varying wavelengths are achieved by changing the Indium (In) composition ratio within this single quantum well.
14. The method of claim 13 , wherein the indium (In) composition ratio is varied in a radial direction of each single quantum well of each of the plurality of light emitting nanostructures.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the single quantum well used as the active layer in each of the light emitting nanostructures), varies the Indium (In) composition ratio across the single quantum well in a radial direction (outward from the center).
15. The method of claim 14 , wherein the indium (In) composition ratio is greater at a center of the single quantum well of each of the plurality of light emitting nanostructures in the radial direction and lower at boundaries of the single quantum well in a radial direction of the plurality of light emitting nanostructures.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the single quantum well used as the active layer in each of the light emitting nanostructures), varies the Indium (In) composition ratio across the single quantum well in a radial direction (outward from the center), specifically with a higher Indium concentration at the center of the quantum well and lower Indium concentration near the boundaries.
16. The method of claim 1 , wherein forming the plurality of light emitting nanostructures of different wavelengths includes forming the active layer of each of the plurality of light emitting nanostructures as a multi-quantum well structure.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths, uses a multi-quantum well structure as the active layer in each of the light emitting nanostructures. The varying wavelengths are achieved by changing the Indium (In) composition ratio within this multi-quantum well structure.
17. The method of claim 16 , wherein the indium (In) composition ratio is varied in a radial direction of each of the multi-quantum well structures of each of the plurality of light emitting nanostructures.
This invention relates to semiconductor light-emitting devices, specifically to nanostructures with multi-quantum well (MQW) structures for improved light emission properties. The problem addressed is achieving uniform and efficient light emission across a device by controlling the composition of indium (In) in the MQW structures. The invention involves a plurality of light-emitting nanostructures, each containing multiple quantum wells. The key innovation is varying the indium composition ratio in a radial direction within each MQW structure. This radial variation allows precise tuning of the bandgap and emission wavelength across the nanostructure, enhancing light emission efficiency and spectral properties. The nanostructures may be arranged in an array or other configuration to form a light-emitting device, such as a laser or LED. The indium composition gradient can be achieved through controlled growth processes, such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), where deposition conditions are adjusted during fabrication. This technique enables better control over optical properties, reducing defects and improving performance in applications like displays, lighting, and optical communication.
18. The method of claim 17 , wherein the indium (In) composition ratio is greater in central ones of a plurality of quantum wells of each multi-quantum well structure in the radial direction and lower in peripheral ones of the plurality of quantum wells of each multi-quantum well structure.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the multi-quantum well structure used as the active layer in each of the light emitting nanostructures), varies the Indium (In) composition ratio across the multi-quantum well structure in a radial direction, specifically with the central quantum wells having a higher Indium concentration compared to the outer, peripheral quantum wells.
19. The method of claim 17 , wherein the indium (In) composition ratio is greater at a center of each of a plurality of quantum wells of each multi-quantum well structure in the radial direction and lower at boundaries of each of the plurality of quantum wells of each multi-quantum well structure.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the multi-quantum well structure used as the active layer in each of the light emitting nanostructures), varies the Indium (In) composition ratio across the multi-quantum well structure in a radial direction, specifically with each individual quantum well having a higher Indium concentration at its center and lower Indium concentration at its boundaries.
20. The method of claim 17 , wherein the indium (In) composition ratio is greater in central ones of a plurality of quantum wells of each multi-quantum well structure in the radial direction and lower in peripheral ones of the plurality of quantum wells of each multi-quantum well structure and the indium (In) composition ratio is greater at a center of each of the plurality of quantum wells of each multi-quantum well structure in the radial direction and lower at boundaries of the plurality of quantum wells of each multi-quantum well structure.
The method of manufacturing a semiconductor light emitting device, which includes creating a base structure containing light emitting and electrode areas, forming multiple light emitting nanostructures with varying wavelengths (achieved by changing the Indium (In) composition ratio within the multi-quantum well structure used as the active layer in each of the light emitting nanostructures), varies the Indium (In) composition ratio across the multi-quantum well structure in a radial direction, specifically with the central quantum wells having a higher Indium concentration compared to the outer, peripheral quantum wells, and each individual quantum well having a higher Indium concentration at its center and lower Indium concentration at its boundaries.
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June 23, 2016
August 29, 2017
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