A plasma processing apparatus for alternately performing a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases. The apparatus includes: a processing container that has a dielectric window in a ceiling and removably accommodates a workpiece; an exhaust unit that evacuates the processing container; a processing gas supply unit that supplies the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit including a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit including a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit that supplies electromagnetic waves into the plasma generating space; a bypass exhaust path; and an opening/closing valve.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A plasma processing apparatus that alternately repeatedly performs a first plasma processing step using first and second processing gases and a second plasma processing step using third and fourth processing gases, the apparatus comprising: a processing container provided with a dielectric window in a ceiling and configured to removably accommodate a workpiece; an exhaust unit configured to evacuate the processing container; a processing gas supply unit configured to supply the first, second, third, and fourth processing gases into the processing container; a first gas introduction unit that includes a top plate gas injection port provided in the dielectric window to face a plasma generating space in the processing container, a dielectric window gas flow path that penetrates through the dielectric window from an outside and arrives at the top plate gas injection port, and a first external gas flow path that defines a gas flow path from the processing gas supply unit to the dielectric window gas flow path; a second gas introduction unit that includes a sidewall gas injection port provided in a sidewall of the processing container to face the plasma generating space in the processing container, a sidewall gas flow path that extends circumferentially inside the sidewall of the processing container and communicates with the sidewall gas injection port, and a second external gas flow path that defines a gas flow path from the processing gas supply unit to the sidewall gas flow path; an electromagnetic wave supply unit configured to supply electromagnetic waves for plasma generation into the plasma generating space in the processing container through the dielectric window; a bypass exhaust path connecting the first external gas flow path and the exhaust unit; and an opening/closing valve provided in the bypass exhaust path, wherein in the first plasma processing step, the first and second processing gases are introduced from the processing gas supply unit into the processing container through the first and second gas introduction units, respectively, and the electromagnetic waves for plasma generation are introduced from the electromagnetic wave supply unit into the processing container, in the second plasma processing step, the third and fourth processing gases are introduced from the processing gas supply unit into the processing container through the first and second gas introduction units, respectively, and the electromagnetic waves for plasma generation are introduced from the electromagnetic wave supply unit into the processing container, and after the first or second plasma processing step is completed, the opening/closing valve is opened to discharge a gas remaining in the dielectric window gas flow path of the first gas introduction unit to the exhaust unit side via the bypass exhaust path.
A plasma processing apparatus repeatedly performs alternating steps to create films. The machine has a processing container with a special window on top where the workpiece sits. A vacuum pump removes gas. A gas supply provides four gases: the first two gases are used in the first processing step, and the second two gases are used in the second processing step. The first gas flows in through a top injection port in the window, and it goes through a special channel in the window. The second gas enters through an opening in the side of the container, flowing in a circular route around the edge. Microwaves are supplied to generate plasma. A bypass exhaust line with a valve exists to quickly vent gas from the window channel after each step to prevent contamination.
2. The plasma processing apparatus of claim 1 , wherein the processing gas supply unit includes a flow rate controller configured to control a flow rate of the first or third processing gas, and is configured to control, over a predetermined time before the first or second plasma processing step is started, the flow rate of the first or third processing gas to be introduced from the processing gas supply unit into the processing container through the first gas introduction unit to a pre-flow rate set value higher than a regular flow rate set value for the first or second plasma processing step.
The plasma processing machine described above includes a flow controller that adjusts the flow rate of either the first or third gas. Before starting the first or second processing step, this controller temporarily increases the flow rate of that gas to a higher-than-normal "pre-flow" setting. This pre-flow helps purge the gas lines and stabilize conditions before the actual film deposition begins. The regular flow rate is used during the actual processing step.
3. The plasma processing apparatus of claim 2 , wherein the pre-flow rate set value is twice to three times the regular flow rate set value.
In the plasma processing machine with flow control described above, the "pre-flow" setting, the increased flow rate used before each processing step to stabilize conditions, is set to be two to three times higher than the regular flow rate used during the actual processing step. This ensures a more thorough purge of the gas lines before each film layer is deposited.
4. The plasma processing apparatus of claim 1 , wherein each of the first and second processing gases is a mixed gas containing the same kinds of gases in independent composition rate and flow rate.
In the plasma processing machine, the first and second processing gases are each mixtures of the same gases (multiple gases are involved in each of the first and second processing gases), but each gas mixture has different proportions of those gases in the mixture, and their flows can be independently controlled to provide different film characteristics. The first and second processing gases independently are mixtures of the same species of gases.
5. The plasma processing apparatus of claim 1 , wherein each of the third and fourth processing gases is a mixed gas containing the same kinds of gases in independent composition rate and flow rate.
In the plasma processing machine, the third and fourth processing gases are each mixtures of the same gases (multiple gases are involved in each of the third and fourth processing gases), but each gas mixture has different proportions of those gases in the mixture, and their flows can be independently controlled to provide different film characteristics. The third and fourth processing gases independently are mixtures of the same species of gases.
6. The plasma processing apparatus of claim 1 , wherein the top plate gas injection port is provided in a central portion of the dielectric window.
In the plasma processing machine, the gas input port in the dielectric window, which introduces the first gas into the plasma chamber, is located in the center of that window. This central location promotes uniform gas distribution across the workpiece surface during film deposition.
7. A method for forming an insulating film on a workpiece using a plasma processing apparatus including: a processing container provided with a dielectric window in a ceiling and configured to removably accommodate the workpiece; an exhaust unit configured to evacuate the processing container; a processing gas supply unit configured to supply first, second, third, and fourth processing gases into the processing container; a first gas introduction unit that includes a top plate gas injection port provided in the dielectric window to face a plasma generating space in the processing container, a dielectric window gas flow path that penetrates through the dielectric window from an outside and arrives at the top plate gas injection port, and a first external gas flow path that defines a gas flow path from the processing gas supply unit to the dielectric window gas flow path; a second gas introduction unit that includes a sidewall gas injection port provided in a sidewall of the processing container to face the plasma generating space in the processing container, a sidewall gas flow path that extends circumferentially inside the sidewall of the processing container and communicates with the sidewall gas injection port, and a second external gas flow path that defines a gas flow path from the processing gas supply unit to the sidewall gas flow path; an electromagnetic wave supply unit configured to supply electromagnetic waves for plasma generation into the plasma generating space in the processing container through the dielectric window; a bypass exhaust path connecting the first external gas flow path and the exhaust unit; and an opening/closing valve provided in the bypass exhaust path, the method comprising: a first step of forming a SiN-containing insulating film containing SiN on the workpiece under plasma of the first and second processing gases generated in the processing container by decompressing the processing container by the exhaust unit while introducing the first and second processing gases each containing trisilylamine (TSA), N 2 gas, Ar gas, and H 2 gas from the processing gas supply unit into the processing container through the first and second gas introduction unit, respectively, and introducing the electromagnetic waves for plasma generation from the electromagnetic wave supply unit; a second step of nitriding the SiN-containing insulating film on the workpiece under plasma of the third and fourth processing gases generated in the processing container by decompressing the processing container by the exhaust unit while introducing the first and second processing gases each containing N 2 gas, Ar gas, and H 2 gas from the processing gas supply unit into the processing container through the first and second gas introduction unit, respectively, and introducing the electromagnetic waves for plasma generation from the electromagnetic wave supply unit; and a third step of discharging a gas remaining in the dielectric window gas flow path of the first gas introduction unit to the exhaust unit side via the bypass exhaust path by opening the opening/closing valve after the first or second plasma processing step is completed, wherein the first step and the second step are alternately repeated with the third step performed therebetween.
An insulating film is created on a workpiece using a plasma processing system. The machine has a processing container with a window on top where the workpiece sits. A vacuum pump removes gas. A gas supply provides four gases. The first gas flows in through a top injection port in the window, and it goes through a channel in the window. The second gas enters through an opening in the side. Microwaves generate plasma. A bypass exhaust line with a valve vents gas from the window channel after each step. First, a SiN film is deposited using trisilylamine (TSA), N2, Ar, and H2 gases. Second, the SiN film is nitrided using N2, Ar, and H2 gases. Between steps, the bypass exhaust valve is opened to remove leftover gases from the window channel. This process alternates to create a final film with desired properties.
8. The method of claim 7 , wherein the flow rate of the first or third processing gas to be introduced from the processing gas supply unit into the processing container through the first gas introduction unit is controlled to a pre-flow rate set value higher than a regular flow rate set value for the step, over a predetermined time before the first or second step is started.
The method for forming an insulating film on a workpiece using plasma further includes temporarily increasing the flow rate of either the first or third gas before starting the first or second processing step. The gas flow rate is increased to a "pre-flow" setting, higher than the regular flow rate during the actual processing, to purge and stabilize the gas lines. The plasma processing apparatus includes: a processing container with a dielectric window, an exhaust unit, a processing gas supply unit, a first gas introduction unit with a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit that includes a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit; a bypass exhaust path; and an opening/closing valve.
9. The method of claim 8 , wherein the pre-flow rate set value is twice to three times the regular flow rate set value.
In the method for forming an insulating film, the "pre-flow" setting, the higher flow rate used before each processing step to stabilize conditions, is two to three times higher than the regular flow rate during the actual processing step. The method uses a plasma processing apparatus including: a processing container with a dielectric window, an exhaust unit, a processing gas supply unit, a first gas introduction unit with a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit that includes a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit; a bypass exhaust path; and an opening/closing valve.
10. The method of claim 7 , wherein a processing temperature of the workpiece is 100° C. to 300° C. in the first step.
The method for forming an insulating film on a workpiece using plasma uses a workpiece processing temperature between 100°C and 300°C during the first step, when the SiN film is being deposited using trisilylamine (TSA), N2, Ar, and H2 gases. The plasma processing apparatus includes: a processing container with a dielectric window, an exhaust unit, a processing gas supply unit, a first gas introduction unit with a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit that includes a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit; a bypass exhaust path; and an opening/closing valve.
11. The method of claim 7 , wherein the processing temperature of the workpiece is 200° C. to 300° C. in the first step.
The method for forming an insulating film on a workpiece using plasma uses a workpiece processing temperature between 200°C and 300°C during the first step, when the SiN film is being deposited using trisilylamine (TSA), N2, Ar, and H2 gases. The plasma processing apparatus includes: a processing container with a dielectric window, an exhaust unit, a processing gas supply unit, a first gas introduction unit with a top plate gas injection port, a dielectric window gas flow path, and a first external gas flow path; a second gas introduction unit that includes a sidewall gas injection port, a sidewall gas flow path, and a second external gas flow path; an electromagnetic wave supply unit; a bypass exhaust path; and an opening/closing valve.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 23, 2015
September 19, 2017
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.