Provided is a plasma treatment method including: placing a substrate carrier holding a substrate on a stage; adjusting a distance between a cover and the stage to a first distance in which the cover covers a frame without coming into contact with the substrate carrier; performing a plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from a reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, in which the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A plasma treatment method which places a substrate held by a substrate carrier that includes a holding sheet and a frame disposed on an outer peripheral portion of the holding sheet, on a stage provided in an inside of a reaction chamber, and covers the frame with a cover that is disposed over the stage and includes a window portion for exposing the substrate, to perform a plasma treatment on the substrate, the method comprising: placing the substrate carrier holding the substrate on the stage; adjusting a distance between the cover and the stage to a first distance in which the cover covers the frame without coming into contact with the substrate carrier; performing the plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from the reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, wherein the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.
A plasma treatment process places a substrate on a stage inside a reaction chamber for plasma processing. The substrate is held by a carrier with a holding sheet and a frame around the sheet's edge. A cover with a window positioned over the substrate shields the frame. The process involves: Placing the carrier on the stage; Setting the gap between the cover and stage to a "first distance," ensuring the cover shields the frame without touching the carrier; Performing plasma treatment on the substrate; Removing the substrate and carrier from the chamber; and Cleaning the cover by generating plasma inside the chamber, using a "second distance" between the cover and stage that's larger than the first distance.
2. The plasma treatment method of claim 1 , wherein the second distance is 2 mm or greater.
The plasma treatment method involves cleaning a cover inside a reaction chamber after plasma processing of a substrate. The gap between the cover and the stage is set to a "second distance" to facilitate cleaning. This second distance, which is used during the cleaning plasma generation step, is 2 mm or greater. This cleaning process occurs after the substrate and substrate carrier have been removed from the reaction chamber. The method is performed on a substrate held by a substrate carrier that includes a holding sheet and a frame disposed on an outer peripheral portion of the holding sheet. The frame is covered with a cover that includes a window portion for exposing the substrate.
3. The plasma treatment method of claim 1 , wherein the second distance is changed in the removing of the adhered substance.
The plasma treatment method involves cleaning a cover inside a reaction chamber after plasma processing of a substrate. The gap between the cover and the stage is set to a "second distance" to facilitate cleaning, and this second distance is varied during the cleaning plasma generation. This cleaning process occurs after the substrate and substrate carrier have been removed from the reaction chamber. The method is performed on a substrate held by a substrate carrier that includes a holding sheet and a frame disposed on an outer peripheral portion of the holding sheet. The frame is covered with a cover that includes a window portion for exposing the substrate.
4. The plasma treatment method of claim 1 , wherein the cover is cooled in the performing of the plasma treatment.
The plasma treatment method includes cooling the cover during the main plasma treatment step performed on the substrate. The substrate is held by a carrier with a holding sheet and a frame around the sheet's edge. A cover with a window positioned over the substrate shields the frame. Before plasma treating the substrate, the gap between the cover and the stage is set to a "first distance" to avoid the carrier touching the cover. After the plasma treatment and substrate removal, the cover is cleaned by generating plasma inside the chamber, using a "second distance" between the cover and stage that's larger than the first distance.
5. The plasma treatment method of claim 1 , wherein the cover is not cooled in the removing of the adhered substance.
The plasma treatment method involves cleaning a cover inside a reaction chamber after plasma processing of a substrate. The cover is *not* cooled during the cleaning process. The substrate is held by a carrier with a holding sheet and a frame around the sheet's edge. A cover with a window positioned over the substrate shields the frame. Before plasma treating the substrate, the gap between the cover and the stage is set to a "first distance" to avoid the carrier touching the cover. After the plasma treatment and substrate removal, the cover is cleaned by generating plasma inside the chamber, using a "second distance" between the cover and stage that's larger than the first distance.
6. The plasma treatment method of claim 1 , wherein a cooling unit is provided in the stage, and the cover is cooled by bringing a part of the cover into contact with the stage.
The plasma treatment method cools the cover during the main plasma treatment by using a cooling unit within the stage. The cover is brought into contact with the stage to facilitate cooling. The substrate is held by a carrier with a holding sheet and a frame around the sheet's edge. A cover with a window positioned over the substrate shields the frame. Before plasma treating the substrate, the gap between the cover and the stage is set to a "first distance" to avoid the carrier touching the cover. After the plasma treatment and substrate removal, the cover is cleaned by generating plasma inside the chamber, using a "second distance" between the cover and stage that's larger than the first distance.
7. A method of manufacturing an electronic component which places a substrate held by a substrate carrier that includes a holding sheet and a frame disposed on an outer peripheral portion of the holding sheet, on a stage provided in an inside of a reaction chamber, and covers the frame with a cover that is disposed over the stage and includes a window portion for exposing the substrate, to perform a plasma treatment on the substrate, the method comprising: preparing the substrate held by the substrate carrier that includes the holding sheet and the frame disposed on the outer peripheral portion of the holding sheet; placing the substrate carrier holding the substrate on the stage; adjusting a distance between the cover and the stage to a first distance in which the cover covers the frame without coming into contact with the substrate carrier; singulating the substrate by performing the plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the singulated substrate together with the substrate carrier out from the reaction chamber after the dicing; and removing a substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, wherein the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.
A method for manufacturing electronic components uses plasma treatment for substrate singulation. The substrate is held by a carrier with a holding sheet and a frame around the sheet's edge. A cover with a window positioned over the substrate shields the frame. The manufacturing process involves: Preparing the substrate; Placing the carrier on the stage inside a reaction chamber; Setting the gap between the cover and stage to a "first distance," ensuring the cover shields the frame without touching the carrier; Singulating the substrate via plasma treatment; Removing the singulated substrate and carrier from the chamber; and Cleaning the cover by generating plasma inside the chamber, using a "second distance" between the cover and stage that's larger than the first distance.
8. A plasma treatment method in which a plasma treatment is performed by placing a substrate held by a resin sheet on a stage provided in an inside of a reaction chamber, the method comprising: placing the substrate on the stage such that a surface of the stage comes into contact with the resin sheet; performing the plasma treatment on the substrate placed on the stage; carrying the substrate together with the resin sheet out from the reaction chamber after the performing of the plasma treatment; and removing a substance discharged from the resin sheet and adhered to the surface of the stage by generating plasma in the reaction chamber after the carrying of the substrate.
A plasma treatment process is used where a substrate is placed on a stage inside a reaction chamber, with a resin sheet between the substrate and the stage. The process involves: Placing the substrate on the stage, ensuring the resin sheet contacts the stage surface; Performing the plasma treatment on the substrate; Removing the substrate and resin sheet from the chamber; and Cleaning the stage surface by generating plasma inside the reaction chamber to remove substances released from the resin sheet that have adhered to the stage.
9. The plasma treatment method of claim 8 , wherein a sequence of the placing of the substrate, the performing of the plasma treatment, and the carrying of the substrate is performed on each of a plurality of the substrates respectively held by a plurality of the resin sheets, and the removing of the substance is performed after the carrying of the substrate in an N-th sequence (N represents an integer) and before the placing of the substrate in an (N+1)-th sequence.
In the plasma treatment method of claim 8, a series of substrate treatments are performed. Each substrate is individually held by a resin sheet. The process of placing the substrate, performing plasma treatment, and removing the substrate is repeated multiple times. The stage cleaning process to remove substances discharged from the resin sheet is performed after the N-th (where N is any integer) substrate is removed but *before* the (N+1)-th substrate is placed on the stage. Thus, the cleaning is an intermittent process, performed between substrate treatments.
10. The plasma treatment method of claim 8 , wherein the removing of the substance is performed in an oxygen atmosphere.
The plasma treatment method of claim 8 involves cleaning the stage surface after substrate processing. This cleaning is performed by generating plasma within the reaction chamber *in an oxygen atmosphere*. This oxygen plasma removes substances discharged from the resin sheet that have adhered to the stage. The method comprises: placing a substrate held by a resin sheet on a stage; performing plasma treatment; removing the substrate/resin sheet; and removing substances adhered to the stage by generating plasma in an oxygen atmosphere.
11. The plasma treatment method of claim 10 , wherein gas including oxygen is supplied to the inside of the reaction chamber during a time period after the performing of the plasma treatment and before initiation of the removing of the substance.
The plasma treatment method, which includes cleaning the stage surface with plasma in a reaction chamber to remove substances discharged from a resin sheet, includes an intermediate step. *After* plasma treating the substrate held by the resin sheet and *before* initiating the stage cleaning with plasma, oxygen-containing gas is introduced into the reaction chamber. Then, stage cleaning occurs in an oxygen atmosphere.
12. The plasma treatment method of claim 11 , wherein only oxygen is supplied to the inside of the reaction chamber during a time period after the performing of the plasma treatment and before initiation of the removing of the substance.
The plasma treatment method includes cleaning the stage surface with plasma in a reaction chamber. An intermediate step involves introducing gas into the reaction chamber *after* plasma treating the substrate and *before* initiating the stage cleaning. During this intermediate step, *only* oxygen is supplied to the inside of the reaction chamber. Then, stage cleaning occurs in an oxygen atmosphere.
13. The plasma treatment method of claim 8 , wherein a high-frequency voltage of 100 kHz or greater is applied to the stage in the performing of the plasma treatment.
The plasma treatment method, which includes cleaning the stage surface after substrate processing, utilizes a high-frequency voltage applied to the stage during plasma treatment. A high-frequency voltage of 100 kHz or greater is applied to the stage when performing plasma treatment on the substrate, which is held by a resin sheet. This is done before the stage cleaning process.
14. The plasma treatment method of claim 8 , wherein a temperature of the resin sheet is controlled to 150° C. or less in the performing of the plasma treatment.
In the plasma treatment method, the temperature of the resin sheet is carefully controlled to prevent excessive outgassing. The temperature of the resin sheet is maintained at or below 150°C *during* the plasma treatment of the substrate, which is held by the resin sheet on the stage. The method includes: placing a substrate held by a resin sheet on a stage; performing plasma treatment; removing the substrate/resin sheet; and removing substances adhered to the stage.
15. The plasma treatment method of claim 10 , further comprising: destaticizing the resin sheet during a time period after the performing of the plasma treatment and before the carrying of the substrate, wherein the destaticizing of the resin sheet is performed in an oxygen atmosphere.
The plasma treatment method, which includes cleaning the stage surface with plasma in an oxygen atmosphere, also includes a destaticization step. The resin sheet, used to hold the substrate, is destaticized *after* plasma treating the substrate and *before* removing the substrate and resin sheet from the chamber. The destaticization process is performed in an oxygen atmosphere. Then, stage cleaning occurs in an oxygen atmosphere.
16. The plasma treatment method of claim 8 , wherein the substance discharged from the resin sheet includes an organic matter.
The plasma treatment method removes material from a stage that has been contaminated from the resin sheet that held the substrate during plasma processing. The material released from the resin sheet and adhering to the stage includes organic matter. This organic matter is then removed by generating plasma within the chamber after the substrate and resin sheet are removed.
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August 23, 2016
October 3, 2017
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