An integrated passive device and assemblies containing the same are disclosed. The integrated passive device can include a thin-film magnetic inductor. Various configurations of electrically connecting an integrated passive device to a processor and/or an interposer such as a chip-scale package are also disclosed. An inductor on an integrated passive device can configured and arranged such that it is magnetically coupled to an inductor on a structure such as a processor chip or a system on a chip.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An assembly comprising: a processor chip having opposing first and second sides, the processor chip comprising: a first multilevel wiring structure; and a first inductor integrated into said first multilevel wiring network and disposed proximal to the first side of the processor chip, said first inductor comprising: a first planar magnetic core; and a first conductive winding comprising at least a portion of said first multilevel wiring network, said first conductive winding turning around in a generally spiral manner around said first planar magnetic core; an integrated passive device (IPD) having opposing first and second sides, the first side of the IPD mounted on the first side of the processor chip, the IPD comprising: a second multilevel wiring structure; and a plurality of passive devices electrically connected to the second multilevel wiring structure, the plurality of passive devices including a second inductor disposed proximal to the first side of the IPD, the second inductor comprising: a second magnetic core; and a second conductive winding comprising at least a portion of said second multilevel wiring structure, said second conductive winding turning around in a generally spiral manner around said second planar magnetic core, wherein the first and second inductors are magnetically coupled.
2. The assembly of claim 1 , wherein the first conductive winding is configured and arranged to generate a first magnetic field that passes through said first magnetic core in a first direction, and the second conductive winding is configured and arranged to generate a second magnetic field that passes through said second magnetic core in a second direction, the second direction opposite to said first direction.
3. The assembly of claim 2 , wherein at least one magnetic field line of said second magnetic field exits said second magnetic core in said second direction and enters said first magnetic core in said first direction resulting in a first net magnetic field passing through said first magnetic core in said first direction, said first net magnetic field greater than said first magnetic field passing through said first magnetic core.
4. The assembly of claim 3 , wherein at least one magnetic field line of said first magnetic field exits said first magnet core in said first direction and enters said second magnetic core in said second direction resulting in a second net magnetic field passing through said second magnetic core in said second direction, said second net magnetic field greater than said second magnetic field passing through said second magnetic core.
5. The assembly of claim 4 , wherein: a second magnetic field line of said second magnetic field exits said second magnetic core in said second direction and passes through a region between said first and second inductors in said first direction, and a second magnetic field line of said first magnetic field exits said first magnetic core in said first direction and passes through said region in said second direction, whereby a net magnetic field in said region is lower than at least one of said first and second magnetic fields that passes through said region.
6. The assembly of claim 1 , wherein at least one of the passive devices includes at least one capacitor that, in combination with the second inductor, forms a resonant impedance matching circuit.
7. The assembly of claim 1 , wherein the impedance matching circuit and the inductor provide an impedance transformation at a particular frequency band.
8. The assembly of claim 1 , wherein the second inductor comprises: a first wiring plane of the second multilevel wiring structure, the first wiring plane including a first metal wire; a second wiring plane of the second multilevel wiring structure, the second wiring plane including a second metal wire; a vertical conductive interconnect (VIA) extending from the first wire to the second wire to electrically connect the first and second wires; a second insulator layer disposed between the first and second wiring planes, said second core disposed in a hole defined in the second insulator layer.
9. An assembly comprising: an interposer having a plurality of wire traces, the wire traces extending from a first side to a second side of the interposer, the first and second sides on opposing sides of the interposer; a processor chip having opposing first and second sides, the processor chip comprising: a first multilevel wiring structure; and a first inductor integrated into said first multilevel wiring network and disposed proximal to the first side of the processor chip, said first inductor comprising: a first planar magnetic core; and a first conductive winding comprising at least a portion of said first multilevel wiring network, said first conductive winding turning around in a generally spiral manner around said first planar magnetic core; a plurality of solder bumps disposed between the processor chip and the first side of the interposer, the solder bumps forming a plurality of gaps between adjacent solder bumps; and an integrated passive device (IPD) having opposing first and second sides, the first side of the IPD mounted on the first side of the processor chip, the IPD disposed in one of said plurality of gaps, the IPD comprising: a second multilevel wiring structure; and a plurality of passive devices electrically connected to the second multilevel wiring structure, the plurality of passive devices including a second inductor disposed proximal to the first side of the IPD, the second inductor comprising: a second magnetic core; and a second conductive winding comprising at least a portion of said second multilevel wiring structure, said second conductive winding turning around in a generally spiral manner around said second planar magnetic core, wherein the first and second inductors are magnetically coupled.
10. The assembly of claim 9 , wherein the first conductive winding is configured and arranged to generate a first magnetic field that passes through said first magnetic core in a first direction, and the second conductive winding is configured and arranged to generate a second magnetic field that passes through said magnetic core in a second direction, the second direction opposite to said first direction.
11. The assembly of claim 10 , wherein at least one magnetic field line of said second magnetic field exits said second magnetic core in said second direction and enters said first magnetic core in said first direction resulting in a first net magnetic field passing through said first magnetic core in said first direction, said first net magnetic field greater than said first magnetic field passing through said first magnetic core.
12. The assembly of claim 11 , wherein at least one magnetic field line of said first magnetic field exits said first magnet core in said first direction and enters said second magnetic core in said second direction resulting in a second net magnetic field passing through said second magnetic core in said second direction, said second net magnetic field greater than said second magnetic field passing through said second magnetic core.
13. The assembly of claim 12 , wherein: a second magnetic field line of said second magnetic field exits said second magnetic core in said second direction and passes through a region between said first and second inductors in said first direction, and a second magnetic field line of said first magnetic field exits said first magnetic core in said first direction and passes through said region in said second direction, whereby a net magnetic field in said region is lower than at least one of said first and second magnetic fields that passes through said region.
14. The assembly of claim 9 , wherein at least one of the passive devices includes at least one capacitor that, in combination with the second inductor, forms a resonant impedance matching circuit.
15. The assembly of claim 14 , wherein the impedance matching circuit and the inductor provide an impedance transformation at a particular frequency band.
16. The assembly of claim 9 , wherein the second inductor comprises: a first wiring plane of the second multilevel wiring structure, the first wiring plane including a first metal wire; a second wiring plane of the second multilevel wiring structure, the second wiring plane including a second metal wire; a vertical conductive interconnect (VIA) extending from the first wire to the second wire to electrically connect the first and second wires; a second insulator layer disposed between the first and second wiring planes, said second core disposed in a hole defined in the second insulator layer.
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January 17, 2017
October 3, 2017
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