A device includes a substrate feature disposed over a substrate. The substrate feature has a first length extending along a first direction and a second length extending along a second direction. The first length is greater than the second length. The device also includes a first material feature disposed over the substrate. The first material feature has a first surface in physical contact with the substrate feature and a second surface opposite to the first surface. The first surface has a third length extending along the first direction and a fourth length extending along the second direction. The third length is greater than the fourth length. The second surface has a fifth length extending along the first direction and a sixth length extending along the second direction. The sixth length is greater than the fifth length.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
1. A device comprising: a first feature disposed over a substrate; a second feature disposed over the first feature, wherein the second feature has a bottom surface in physical contact with the first feature and a top surface opposite to the bottom surface, wherein a dimension of the second feature along a first direction continuously increases as a height of the second feature increases from the bottom surface to the top surface, another dimension of the second feature along a second direction continuously decreases as the height of the second feature increases from the bottom surface to the top surface, and the first and second directions are different; and a third feature disposed over the second feature and in physical contact with the top surface, wherein the third feature is longer along the first direction than along the second direction, and the first feature is longer along the second direction than along the first direction.
A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.
2. The device of claim 1 , wherein the second direction is perpendicular to the first direction.
This device's stacked features (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) has the first and second directions perpendicular to each other, creating a right-angle change in feature dimension.
3. The device of claim 1 , wherein: the first feature includes a first conductive line; the second feature includes a conductive material; and the third feature includes a second conductive line.
In this device with stacked features (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) the first feature is a conductive line, the second feature is a conductive material, and the third feature is a second conductive line, indicating a connection between two conductive lines through a conductive transition structure with changing dimensions.
4. The device of claim 1 , wherein the second feature includes a first sidewall and a second sidewall, the first sidewall is trapezoid, and the second sidewall is inverted trapezoid.
The second feature in the stacked-feature device (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) includes a first sidewall shaped like a trapezoid and a second sidewall shaped like an inverted trapezoid. This implies a non-symmetric, tapered structure.
5. The device of claim 1 , wherein the second feature is embedded in a dielectric layer and in direct contact with the dielectric layer.
In the stacked-feature device (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) the second feature is surrounded by a dielectric layer and is directly touching it. This suggests insulation and support by the dielectric material.
6. The device of claim 1 , wherein the second feature is embedded in a dielectric layer.
The stacked-feature device (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) has the second feature embedded within a dielectric layer. This implies that the dielectric material provides electrical insulation or structural support.
7. A device comprising: a first conductive feature disposed over a substrate, wherein the first conductive feature is shorter along a first direction than along a second direction different from the first direction; a second conductive feature having a first surface in physical contact with the first conductive feature and a second surface opposite to the first surface, wherein a dimension of the second conductive feature along the first direction continuously increases as a height of the second conductive feature increases from the first surface to the second surface, another dimension of the second conductive feature along the second direction continuously decreases as the height of the second conductive feature increases from the first surface to the second surface; and the second conductive feature is embedded in a dielectric layer; and a third conductive feature disposed over the second conductive feature and in physical contact with the second surface, wherein the third conductive feature is longer along the first direction than along the second direction.
A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.
8. The device of claim 7 , wherein the second direction is perpendicular to the first direction.
This device with three conductive features (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) has the first and second directions perpendicular, indicating a 90-degree change in feature orientation.
9. The device of claim 7 , wherein the first surface has a same shape as the second surface and a center of the second surface is vertically aligned with a center of the first surface.
In this conductive feature device (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) the top and bottom surfaces of the second feature have the same shape, and their centers are vertically aligned, implying a direct vertical connection with consistent geometry, only changing in size.
10. The device of claim 7 , wherein the first surface and the second surface have an elliptical shape or an rectangular shape.
In this conductive feature device (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) the top and bottom surfaces of the second feature are either elliptical or rectangular, defining the shape of the transition region.
11. The device of claim 7 , wherein: the first conductive feature includes a first metal line; the second conductive feature includes a via; and the third conductive feature includes a second metal line.
In this conductive feature device (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) the first conductive feature is a metal line, the second conductive feature is a via, and the third conductive feature is a second metal line, representing a connection between two metal layers using a via with changing dimensions.
12. The device of claim 7 , wherein the second conductive feature includes a first sidewall and a second sidewall, wherein the first sidewall is trapezoid and the second sidewall is inverted trapezoid.
The second conductive feature (via) of this three-layer conductive device (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) includes a first sidewall shaped like a trapezoid and a second sidewall shaped like an inverted trapezoid, suggesting a tapered via structure that is not symmetrical.
13. The device of claim 7 , wherein the first conductive feature includes a gate electrode.
In this conductive feature device (as described: A device includes three conductive features: a first, shorter in a first direction than a second; a second, with changing dimensions along two directions and surrounded by a dielectric layer; and a third, longer in the first direction. The second feature connects the first and third, its length along the first direction increasing with height, while its length along the second direction decreases with height.) the first conductive feature is a gate electrode, indicating a connection to a transistor gate.
14. A device, comprising: a first metal layer disposed over a substrate and having a first metal line spanning in a first direction; a second metal layer disposed over the first metal layer and having a second metal line spanning in a second direction different from the first direction; and a conductive via feature interposed between the first metal layer and the second metal layer and configured to vertically connect the first metal line to the second metal line, wherein the conductive via feature is surrounded by a single dielectric layer, wherein the conductive via feature includes: a bottom surface contacting the first metal line and having an elongated shape with a longitudinal axis oriented in the first direction; and a top surface contacting the second metal line and having an elongated shape with a longitudinal axis oriented in the second direction.
A device includes a first metal layer with a metal line spanning in a first direction, a second metal layer with a metal line spanning in a second, different direction, and a conductive via connecting the lines. The via is surrounded by a dielectric layer. The via has a bottom surface touching the first metal line, elongated along the first direction, and a top surface touching the second metal line, elongated along the second direction.
15. The device of claim 14 , wherein the bottom surface and the top surface have a same shape and a center of the top surface is vertically aligned with a center of the bottom surface.
In this metal layer and via device (as described: A device includes a first metal layer with a metal line spanning in a first direction, a second metal layer with a metal line spanning in a second, different direction, and a conductive via connecting the lines. The via is surrounded by a dielectric layer. The via has a bottom surface touching the first metal line, elongated along the first direction, and a top surface touching the second metal line, elongated along the second direction.) the bottom and top surfaces of the via have the same shape, and their centers are vertically aligned, indicating a consistent shape transition.
16. The device of claim 14 , wherein the first direction is perpendicular to the second direction.
In this metal layer and via device (as described: A device includes a first metal layer with a metal line spanning in a first direction, a second metal layer with a metal line spanning in a second, different direction, and a conductive via connecting the lines. The via is surrounded by a dielectric layer. The via has a bottom surface touching the first metal line, elongated along the first direction, and a top surface touching the second metal line, elongated along the second direction.) the first and second directions are perpendicular, indicating a 90-degree change in metal line orientation.
17. The device of claim 1 , wherein a center of the bottom surface is vertically aligned with a center of the top surface.
The center of the bottom surface of the second feature in the three-layer device (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) is vertically aligned with the center of the top surface, suggesting a direct vertical connection.
18. The device of claim 1 , wherein each of the bottom surface and the top surface is an elliptical shape or a rectangular shape.
Both the bottom and top surfaces of the second feature in the three-layer device (as described: A device features three stacked components: a first feature on a substrate, a second feature on the first, and a third feature on the second. The second feature's shape changes with height. Its length along a first direction continuously increases from its bottom to its top, while its length along a second, different direction, continuously decreases. The third feature is longer along the first direction, while the first feature is longer along the second direction, effectively acting as an interconnect with changing dimensions.) have either an elliptical or a rectangular shape, specifying the base geometry of the second feature.
19. The device of claim 14 , wherein a dimension of the conductive via feature along the first direction continuously decreases as a height of the conductive via feature increases from the bottom surface to the top surface, another dimension of the conductive via feature along the second direction continuously increases as the height of the conductive via feature increases from the bottom surface to the top surface.
In this metal layer and via device (as described: A device includes a first metal layer with a metal line spanning in a first direction, a second metal layer with a metal line spanning in a second, different direction, and a conductive via connecting the lines. The via is surrounded by a dielectric layer. The via has a bottom surface touching the first metal line, elongated along the first direction, and a top surface touching the second metal line, elongated along the second direction.), the dimension of the via along the first direction continuously decreases from the bottom to the top, while the dimension along the second direction continuously increases.
20. The device of claim 19 , wherein each of the top and bottom surfaces has an elliptical shape.
In this metal layer and via device (as described: A device includes a first metal layer with a metal line spanning in a first direction, a second metal layer with a metal line spanning in a second, different direction, and a conductive via connecting the lines. The via is surrounded by a dielectric layer. The via has a bottom surface touching the first metal line, elongated along the first direction, and a top surface touching the second metal line, elongated along the second direction.) where the via's dimensions change along different directions (as described: the dimension of the via along the first direction continuously decreases from the bottom to the top, while the dimension along the second direction continuously increases), both the top and bottom surfaces are elliptical.
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August 21, 2015
October 10, 2017
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