The present description relates to the field of fabricating microelectronic packages, wherein a microelectronic device may be attached to a microelectronic substrate with a compensator to control package warpage. The warpage compensator may be a low coefficient of thermal expansion material, including but not limited to silicon or a ceramic material, which is positioned on a land-side of the microelectronic device to counteract the thermal expansion effects of the microelectronic device.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A microelectronic package, comprising: a microelectronic device having a land side surface and at least one side, wherein the microelectronic device is attached to a microelectronic substrate; an encapsulation material adjacent the at least one side of the microelectronic device; a build-up layer adjacent the microelectronic device land side surface and the encapsulation material, wherein the build-up layer comprises a first build-up dielectric layer, a second build-up dielectric layer, at least one conductive trace, and at least one conductive via; and a warpage compensator positioned within the build-up layer between the first build-up dielectric layer and the second build-up dielectric layer, wherein neither the at least one conductive trace nor the at least one conductive via contacts the warpage compensator.
2. The microelectronic package of claim 1 , wherein the warpage compensator has substantially the same coefficient of thermal expansion as the microelectronic device.
3. The microelectronic package of claim 1 , wherein the warpage compensator is substantially the same material as a material used to form the microelectronic device.
4. The microelectronic package of claim 1 , wherein the warpage compensator comprises a silicon-containing material.
5. The microelectronic package of claim 1 , wherein the warpage compensator comprises a ceramic material.
6. The microelectronic package of claim 5 , wherein the ceramic material is selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and ceramic glass.
7. The microelectronic package of claim 4 , wherein the warpage compensator comprises a silicon-containing material selected from the group consisting of a silicon monocrystalline material, amorphous silicon, and fused silicon.
8. The microelectronic package of claim 1 , wherein the warpage compensator comprises a material selected from the group consisting of germanium, gallium arsenide, indium antimonide, lead telluride, indium arsenide, indium phosphide, and gallium antimonide.
9. The microelectronic package of claim 1 , wherein the warpage compensator comprises alumina.
10. The microelectronic package of claim 1 , wherein the warpage compensator comprises a nickel steel alloy.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
July 7, 2016
October 17, 2017
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