A photolithography tool includes at least one process chamber, at least one front opening unified pod (FOUP) stage, at least one moving mechanism, and an image sensor. The moving mechanism is configured to move the wafer from the process chamber to the FOUP stage. The image sensor is configured to capture the image of the wafer on the moving mechanism.
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1. A photolithography tool, comprising: at least one process chamber; at least one front opening unified pod (FOUP) stage; at least one moving mechanism configured to move at least one wafer from the process chamber to the FOUP stage; an image sensor configured to capture an image of the wafer on the moving mechanism; a detector configured to detect whether the wafer is present within a field of view of the image sensor; and an actuator configured to actuate the image sensor to capture the image of the wafer when the wafer is detected to be present within the field of view of the image sensor.
A photolithography tool for manufacturing semiconductors includes a process chamber where wafers are processed, and a FOUP (Front Opening Unified Pod) stage for holding and transferring wafers. A moving mechanism transports wafers between the process chamber and the FOUP stage. An image sensor captures images of the wafer while it is being moved. A detector confirms the wafer's presence within the image sensor's view. An actuator triggers the image sensor to take a picture only when the detector confirms the wafer is present and in the correct position for imaging.
2. The photolithography tool of claim 1 , further comprising: a light source configured to illuminate the wafer on the moving mechanism.
The photolithography tool described in the previous claim (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, and sensor actuator) also has a light source that illuminates the wafer while the image sensor is capturing the image, improving image quality.
3. The photolithography tool of claim 2 , wherein the actuator is configured to actuate the light source to illuminate the wafer on the moving mechanism.
Expanding on the tool described previously (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, sensor actuator, and light source), the actuator that triggers the image sensor to capture a wafer image also activates the light source to illuminate the wafer, ensuring synchronized image capture and illumination.
4. The photolithography tool of claim 1 , wherein the image sensor is an area image sensor.
The photolithography tool described earlier (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, and sensor actuator) uses an area image sensor, which captures a two-dimensional image of the entire wafer surface at once, rather than scanning it line by line.
5. The photolithography tool of claim 1 , wherein the image sensor is a charge-coupled device (CCD) or an active-pixel sensor (APS).
The photolithography tool described earlier (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, and sensor actuator) employs a charge-coupled device (CCD) or an active-pixel sensor (APS) as the image sensor for capturing the wafer image. These are specific types of image sensors commonly used in imaging applications.
6. The photolithography tool of claim 1 , further comprising: a processing unit configured to compare the image of the wafer with a reference image and determine whether the wafer is acceptable based on the comparison between the image of the wafer and the reference image.
Building upon the previously described tool (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, and sensor actuator), a processing unit compares the captured wafer image with a reference image. Based on this comparison, the processing unit determines if the wafer is acceptable, identifying defects or deviations from the expected pattern.
7. The photolithography tool of claim 1 , wherein the process chamber is configured to form a photoresist on the wafer, and the image sensor is configured to capture the image of the wafer with the photoresist thereon.
In the previously described tool (a tool with a process chamber, FOUP stage, moving mechanism, image sensor, wafer detector, and sensor actuator), the process chamber applies a photoresist layer to the wafer. The image sensor then captures an image of the wafer with this photoresist layer on it, allowing for inspection of the photoresist coating.
8. A photolithography tool, comprising: at least one process chamber; at least one front opening unified pod (FOUP) stage; at least one transportation space communicating the FOUP stage with the process chamber; at least one moving mechanism present in the transportation space; an image sensor present in the transportation space; a detector configured to detect whether a wafer is present within the transportation space; and an actuator configured to actuate the image sensor to capture an image of the wafer when the wafer is detected to be present within the transportation space.
A photolithography tool includes a process chamber, a FOUP stage, and a transportation space connecting them. A moving mechanism is present in the transportation space to move wafers. An image sensor is also present in this space to capture images of wafers during transport. A detector in the transportation space identifies when a wafer is present. An actuator triggers the image sensor to capture an image when a wafer is detected within the transportation space.
9. The photolithography tool of claim 8 , further comprising: a light source present in the transportation space.
The photolithography tool described in the previous claim (a tool with a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, and sensor actuator in the transportation space) also has a light source located within the transportation space to illuminate the wafer for imaging.
10. The photolithography tool of claim 9 , wherein the light source is configured to provide light with a wavelength greater than about 365 nm.
The photolithography tool, which includes a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, sensor actuator, and light source in the transportation space, uses a light source that emits light with a wavelength greater than 365 nm. This specific wavelength range might be chosen to avoid unwanted exposure of the photoresist.
11. The photolithography tool of claim 8 , wherein the image sensor is an area image sensor.
The photolithography tool described earlier (a tool with a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, and sensor actuator in the transportation space) uses an area image sensor for capturing the wafer image in the transportation space. This captures a full 2D image at once.
12. The photolithography tool of claim 8 , wherein the image sensor is a charge-coupled device (CCD) or an active-pixel sensor (APS).
The photolithography tool described earlier (a tool with a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, and sensor actuator in the transportation space) utilizes either a charge-coupled device (CCD) or an active-pixel sensor (APS) as its image sensor within the transportation space.
13. The photolithography tool of claim 8 , further comprising: a processing unit electrically connected to the image sensor, wherein the image sensor is configured to capture an image of the wafer in the transportation space, and the processing unit is programmed to compare the image of the wafer with a reference image and determine whether the wafer is acceptable based on the comparison between the image of the wafer and the reference image.
Expanding on the tool described earlier (a tool with a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, and sensor actuator in the transportation space), a processing unit is connected to the image sensor. The image sensor captures an image of the wafer in the transportation space, and the processing unit compares this image against a reference image to determine if the wafer meets quality standards.
14. The photolithography tool of claim 8 , wherein the detector is in the transportation space.
In the photolithography tool described previously (a tool with a process chamber, FOUP stage, transportation space, moving mechanism, image sensor, wafer detector, and sensor actuator in the transportation space), the detector that identifies wafer presence is located within the transportation space.
15. A photolithography method, comprising: forming a photoresist on a wafer in at least one process chamber; moving the wafer from the process chamber to a front opening unified pod (FOUP) stage; detecting whether the wafer is present within a field of view of an image sensor; and capturing an image of the wafer by the image sensor when the wafer is moved from the process chamber to the FOUP stage and when the wafer is detected to be present within the field of view of the image sensor.
A photolithography method involves applying photoresist to a wafer inside a process chamber. The wafer is then moved to a FOUP stage. The method includes detecting whether the wafer is within the view of an image sensor as it's being moved. If the wafer is detected, the image sensor captures an image of the wafer while it is moved from the chamber to the FOUP stage.
16. The photolithography method of claim 15 , further comprising: illuminating the wafer when performing the capturing of the image of the wafer.
The photolithography method, which includes forming photoresist, moving the wafer, detecting its presence, and capturing an image, further involves illuminating the wafer while capturing the image to enhance image clarity.
17. The photolithography method of claim 15 , wherein the forming the photoresist on the wafer comprises: applying the photoresist on the wafer; exposing the photoresist to a pattern of light; and developing the exposed photoresist, wherein the capturing the image of the wafer is performed after the developing the exposed photoresist.
The photolithography method, which involves moving the wafer, detecting its presence, and capturing an image, includes a specific process for forming the photoresist. This involves applying the photoresist, exposing it to a pattern of light, and then developing it. The image capture occurs *after* the photoresist has been developed.
18. The photolithography method of claim 15 , further comprising: detecting whether the wafer leaves the process chamber, wherein the capturing the image of the wafer is performed after the wafer is detected to have left the process chamber.
The photolithography method described earlier (forming photoresist, moving the wafer, detecting its presence, and capturing an image) includes detecting when the wafer leaves the process chamber. The image of the wafer is captured *after* the wafer is detected to have left the process chamber.
19. The photolithography method of claim 15 , further comprising: comparing the image of the wafer with a reference image; and determining whether the wafer is acceptable based on the comparing the image of the wafer.
The photolithography method, which involves forming photoresist, moving the wafer, detecting its presence, and capturing an image, also includes comparing the captured image of the wafer with a reference image. Based on this comparison, a determination is made as to whether the wafer is acceptable or defective.
20. The photolithography method of claim 15 , wherein the capturing the image of the wafer comprises: capturing a plurality of parts of the image of the wafer; and combining the parts of the image of the wafer to form a whole image of the wafer.
The photolithography method described previously (forming photoresist, moving the wafer, detecting its presence) captures the image of the wafer by taking multiple smaller images of different parts of the wafer. These partial images are then combined to create a complete, high-resolution image of the entire wafer surface.
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October 30, 2015
November 7, 2017
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