A Group III nitride semiconductor light-emitting device includes a support, a p-electrode provided on the support, a p-type layer including a Group III nitride semiconductor and provided on the p-electrode, an active layer including a Group III nitride semiconductor and provided on the p-type layer, an n-type layer including a Group III nitride semiconductor and provided on the active layer, an n-electrode which is connected to the n-type layer, a first trench having a depth extending from a back surface of the p-type layer on a side of the p-electrode to reach the n-type layer, an auxiliary electrode which is in contact with a back surface of the n-type layer at a bottom of the first trench, but is not in contact with side walls of the first trench, and an insulating film which exhibits light permeability.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A Group III nitride semiconductor light-emitting device, comprising: a support; a p-electrode provided on the support; a p-type layer comprising a Group III nitride semiconductor and provided on the p-electrode; an active layer comprising a Group III nitride semiconductor and provided on the p-type layer; an n-type layer comprising a Group III nitride semiconductor and provided on the active layer; an n-electrode which is electrically connected to the n-type layer; a first trench having a depth extending from a lower surface of the p-type layer on a side of the p-electrode to reach the n-type layer; an auxiliary electrode which is in contact with a lower surface of the n-type layer at a bottom of the first trench, but is not in contact with side walls of the first trench; an insulating film which exhibits light permeability and is provided to cover the auxiliary electrode and the bottom and side walls of the first trench; and a second trench which is provided in a region facing a portion of the auxiliary electrode in a direction perpendicular to a main surface of the device, and which has a depth extending from an upper surface of the n-type layer on a side opposite the side of the p-electrode to the auxiliary electrode, wherein the n-electrode comprises only a pad portion and is provided on a portion of the auxiliary electrode exposed through the second trench.
2. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the device further comprises: a third trench which is provided in a region not facing the auxiliary electrode in the direction perpendicular to the main surface of the device, and which has a depth extending from the upper surface of the n-type layer on the side opposite the side of the p-electrode to the p-electrode; and a p-pad electrode which is provided on a portion of the p-electrode exposed through the third trench.
3. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein a total area of the auxiliary electrode is greater than a total area of the n-electrode.
4. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the first trench and the auxiliary electrode comprise a wiring pattern, respectively.
5. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the side walls of the first trench are inclined such that an area of a horizontal cross section of the first trench parallel to the main surface of the device is reduced with decreasing distance between the horizontal cross section and the n-type layer.
6. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the first trench and the auxiliary electrode comprise a surrounding wiring pattern which surrounds a periphery of a light emission region, respectively.
7. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the auxiliary electrode comprises V/Al, Ti/Al, V/Au, Ti/Au, or Ni/Au.
8. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein, as viewed from above, the auxiliary electrode encompasses the n-electrode.
9. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the light-emitting device has a rectangular form, and wherein two pad portions are provided at diagonal positions of the light-emitting device having the rectangular form.
10. A Group III nitride semiconductor light-emitting device according to claim 2 , wherein the light-emitting device has a rectangular form, and wherein two pad portions are provided at diagonal positions of the light-emitting device having the rectangular form.
11. A Group III nitride semiconductor light-emitting device according to claim 2 , wherein the light-emitting device has a rectangular form, and wherein the n-electrode and the p-pad electrode are disposed at diagonal positions of the light-emitting device having the rectangular form.
12. Group III nitride semiconductor light-emitting device according to claim 2 , wherein the support comprises a ceramic substrate.
13. A Group III nitride semiconductor light-emitting device according to claim 6 , wherein the first trench and the auxiliary electrode comprise a grid-like wiring pattern.
14. A Group III nitride semiconductor light-emitting device according to claim 13 , wherein the light-emitting device has a rectangular form, and wherein two pad portions are provided at diagonal positions of the light-emitting device having the rectangular form.
15. A Group III nitride semiconductor light-emitting device according to claim 14 , wherein the support comprises an electrically conductive substrate and a current is supplied to the p-electrode through the electrically conductive substrate.
16. A Group III nitride semiconductor light-emitting device according to claim 1 , further comprising gaps between the insulating film on side walls of the auxiliary electrode and the insulating film on the side walls of the first trench, the gaps being filled with the p-electrode.
17. A Group III nitride semiconductor light-emitting device according to claim 2 , further comprising gaps between the insulating film on side walls of the auxiliary electrode and the insulating film on the side walls of the first trench, the gaps being filled with the p-electrode.
18. A Group III nitride semiconductor light-emitting device according to claim 13 , further comprising gaps between the insulating film on side walls of the auxiliary electrode and the insulating film on the side walls of the first trench, the gaps being filled with the p-electrode.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 14, 2010
June 25, 2013
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